Publications

• Communication dans un congrès

1/f noise and ballistic mobility in GaN/AlGaN heterostructure field effect transistors in high magnetic fields

S.L. Rumyantsev, M. Shur, W. Knap, N. Dyakonova, F. Pascal, A. Hoffman, Y. Guhel, Christophe Gaquière, D. Theron

2004, pp.277-85. ⟨hal-00141970⟩

• Communication dans un congrès

Perte de vision centrale : aide visuelle portée sur la tête

Jean-Claude Kastelik, Michel Pommeray, M. Slachciak

2004, pp.Hors-série 1-4. ⟨hal-00152951⟩

• Communication dans un congrès

Principles of ultrasonic velocimetry by means of nonlinear interaction of phase conjugate waves

Y. Pyl'Nov, Vladimir Preobrazhensky

2004, pp.1612-1615. ⟨hal-00162782⟩

• Article dans une revue

Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert, N. Labat, A. Curutchet, A. Touboul, Christophe Gaquière, A. Minko

Fluctuation and Noise Letters, 2004, 4, pp.L319-L328. ⟨hal-00162793⟩

• Autre publication scientifique

Contribution à l'optimisation de transistors à effet de champ MESFET à base de carbure de silicium 4 H pour applications en amplification de puissance RF/hyperfréquence

A. Kerlain

2004. ⟨hal-00141954⟩

• Article dans une revue

Matching ultrasonic transducer using two matching layers where one of them is glue

Dorothée Debavelaere-Callens, C. Bruneel, Jamal Assaad

NDT & E International, 2004, 37, pp.591-596. ⟨hal-00141975⟩

• Article dans une revue

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

Marie-Antoinette Di Forte-Poisson, M. Magis, Maurice Tordjman, Raphaël Aubry, Nicolas Sarazin, M. Peschang, Erwan Morvan, Sylvain Laurent Delage, J. Di Persio, R. Quere, B. Grimbert, Virginie Hoel, E. Delos, Damien Ducatteau, Christophe Gaquière

This paper reports on the LP-MOCVDgrowth optimisation of GaAlN/GaN heterostructures grown on silicon carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical impact of some growth parameters on the physical properties of the GaAlN/…

Journal of Crystal Growth, 2004, 272 (1-4), pp.305-311. ⟨10.1016/j.jcrysgro.2004.08.121⟩. ⟨hal-00141957⟩

• Communication dans un congrès

Reconstruction of bubble translation in travelling ultrasonic waves

P. Koch, R. Mettin, T. Tervo, W. Lauterborn, Bertrand Dubus, A. Moussatov

9th Meeting of the European Society of Sonochemistry, 2004, Badajoz, Spain. ⟨hal-00133873⟩

• Article dans une revue

Nonlinear effects in T-branch junctions

J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, E. Pichonat, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy

IEEE Electron Device Letters, 2004, 25, pp.235-237. ⟨hal-00133878⟩

• Article dans une revue

Lithium insertion mechanism in CoSb3 analysed by 121Sb Mössbauer spectrometry, X-ray: Absorption Spectroscopy and electronic structure calculations

Isabelle Devos, Manfred Womes, Mike Heilemann, Josette Olivier-Fourcade, Jean-Claude Jumas, José Luis Tirado

The lithium insertion mechanism into the skutterudite-type CoSb3 compound has been studied using X-ray Absorption Near Edge Structure (XANES), 121Sb Mössbauer spectrometry and electronic structure calculations based on the Density Functional Theory (DFT) in the Linear Muffin Tin Orbital (LMTO)…

Journal of Materials Chemistry, 2004, 14, pp.1759-1767. ⟨10.1039/B312618H⟩. ⟨hal-00141245⟩