Publications

• Communication dans un congrès

THz study of liquids using an integrated bragg filter

Jean-Francois Lampin, L. Desplanque, M. Ternisien, T. Crepin, C. Walloth, D. Lippens, F. Mollot

2004, pp.469-470. ⟨hal-00140721⟩

• Article dans une revue

Confinement effects in PbSe quantum wells and nanocrystals

Guy Allan, Christophe Delerue

The effect of quantum confinement in PbSe quantum wells and dots is studied using tight binding calculations. Compared to zinc-blende semiconductors, unusual physical properties are predicted for rock salt PbSe nanostructures. The energy gap increases as the inverse of the size both for wells and…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.245321/1-9. ⟨10.1103/PhysRevB.70.245321⟩. ⟨hal-00141253⟩

• Communication dans un congrès

Self-assembled molecular diodes on silicon

S. Lenfant, C. Merckling, David Guérin, D. Vuillaume, F. Tran Van, C. Chevrot

Ultimate Lithography and Nanodevice Engineering, 2004, Agelonde, France. ⟨hal-00140751⟩

• Article dans une revue

Effects of grain boundaries, field dependent mobility and interface state traps on the characteristics of pentacene thin film transistor

A. Bolognesi, M. Berliocchi, M. Manenti, Aldo Di Carlo, Paolo Lugli, Kamal Lmimouni, Claude Dufour

We have fabricated pentacene-based thin film transistors and analyzed their electrical properties with the help of two-dimensional drift-diffusion simulations which favorably compare with the experimental results. We have set up a model considering the polycrystalline nature of pentacene and the…

IEEE Transactions on Electron Devices, 2004, 51 (12), pp.1997-2003. ⟨10.1109/TED.2004.838333⟩. ⟨hal-00140735⟩

• Communication dans un congrès

Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivité

M. Werquin, D. Ducatteau, N. Vellas, D. Jambon, D. Theron, E. Delos, N. Caillas, Y. Cordier, Jean-Claude de Jaeger, S. Delage, Christophe Gaquière

GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141965⟩

• Communication dans un congrès

Transistor MOSFET Schottky en régime nanométrique

G. Larrieu, Emmanuel Dubois

Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00140994⟩

• Article dans une revue

Broadband frequency filtering and mode matching using finline technology

T. Decoopman, X. Melique, O. Vanbésien, D. Lippens

Microwave and Optical Technology Letters, 2004, 41, pp.234-7. ⟨hal-00133953⟩

• Article dans une revue

Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors (MOSFETs)

Emmanuel Dubois, G. Larrieu

Journal of Applied Physics, 2004, 96, pp.729-737. ⟨hal-00140973⟩

• Communication dans un congrès

Theoretical analysis of a directional source for four-dimensional seismic monitoring

Madjid Berraki, Bertrand Dubus, Axelle Baroni

The aim of four dimensional seismic monitoring is to monitor the changes in the subsurface in time; to achieve this, measurements are continuously repeated with the same space configuration. Reliability and repeatability of the acquisition footprint are thus key requirements for four dimensional…

148th Acoustical Society of America Meeting, Nov 2004, San Diego, CA, United States. ⟨10.1121/1.4784953⟩. ⟨hal-00133875⟩

• Communication dans un congrès

High-frequency extension of the transmission-line theory for an open line

A. Cozza, F. Canavero, B. Demoulin

12ème Colloque International et Exposition sur la Compatibilité Electromagnétique, CEM'04, 2004, Toulouse, France. pp.165-170. ⟨hal-00509722⟩