Publications

Affichage de 13761 à 13770 sur 16104


  • Communication dans un congrès

Bruit haute fréquence dans les transistors MOS sur SOI : méthodes de caractérisations et de modélisations

G. Pailloncy

WORKSHOP Laboratoire Commun IEMN/ST Microelectronics, 2004, Crolles, France. ⟨hal-00133898⟩

  • Communication dans un congrès

Composants balistiques

S. Bollaert

Journées Nationales Microélectronique et Optoélectronique, 2004, La Grande Motte, France. ⟨hal-00133910⟩

  • Communication dans un congrès

FinFET achievement : optimum e-beam lithography to etch dense silicon fins networks

F. Fruleux, J. Penaud, Emmanuel Dubois, G. Larrieu

MIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France. ⟨hal-00140996⟩

  • Article dans une revue

NDE of two-layered mortar samples using high-frequency Rayleigh waves

M. Goueygou, Bogdan Piwakowski, A. Fnine, M. Kaczmarek, F. Buyle-Bodin

Ultrasonics, 2004, 42, pp.889-895. ⟨hal-00140727⟩

  • Article dans une revue

Long range radar sensor for application in railway tunnels

M. Lienard, Pierre Degauque, Pierre Laly

IEEE Transactions on Vehicular Technology, 2004, 53, pp.705-715. ⟨hal-00142005⟩

  • Communication dans un congrès

Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

Jean-Sebastien Galloo, Emmanuelle Pichonat, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz, Isabelle Huynen

We have developed technolow based on GaInAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-Branch Junctions (TBJs), YBranch Junctions (YBJs)). Then we present DC Characterization of TBJs to show the transition from ballistic to ohmic…

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩. ⟨hal-00133896⟩