Publications

Affichage de 1381 à 1390 sur 16181


  • Communication dans un congrès

A simulation tool to interpret error rates in LoRa systems under frequency-sweeping jamming

Artur de São José, Virginie Deniau, Alexandre Boé, Eric Pierre Simon

In a recent experimental study, we submitted a LoRa system to jamming attacks, consisting of frequency-sweeping intentional electromagnetic interference. In the present contribution, we reproduce this scenario in a computational environment aiming to explain the previously observed phenomena based…

XXXVth General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS 2023), Aug 2023, Sapporo, Japan. pp.1-4, ⟨10.23919/URSIGASS57860.2023.10265647⟩. ⟨hal-04127556v2⟩

  • Communication dans un congrès

Automated and Robotic On-Wafer Probing Station

Cerine Mokhtari, Clément Lenoir, Mohamed Sebbache, Kamel Haddadi

Emergent microwave and millimetre-wave technologies call for new and more accurate characterization techniques. In particular, repeatability of on-wafer calibration and measurements methods must be addressed. In this work, we are presenting the hardware and software development of a new…

2023 IEEE Symposium on Wireless Technology & Applications (ISWTA), Aug 2023, Kuala Lumpur, Malaysia. pp.99-102, ⟨10.1109/ISWTA58588.2023.10249964⟩. ⟨hal-04268605⟩

  • Article dans une revue

Highly Conductive Tungsten Suboxide Nanotubes

Cécile Huez, Maxime Berthe, Florence Volatron, Jean-Michel Guigner, Dalil Brouri, Lise-Marie Chamoreau, Benoît Baptiste, Dominique Vuillaume, Anna Proust

We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the temperature range 120 to 300K by a four probe scanning…

Journal of Applied Physics, 2023, 134, pp.134301. ⟨10.1063/5.0170761⟩. ⟨hal-04178947v2⟩

  • Article dans une revue

Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT

Charles Pitaval, Cédric Lacam, N. Defrance, Christophe Gaquière, Nicolas Michel, Olivier Parillaud, Sylvain Delage

The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlGaN quaternary alloys require low thermal budget to avoid indium…

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200476. ⟨10.1002/pssa.202200476⟩. ⟨hal-03875911⟩

  • Article dans une revue

Charge-Dependent Flexural Rigidity of a Conductive Polymer Laminate for Bioinspired Non-thermal Compliance Modulation

Yauheni Sarokin, Vadim Becquer, Eric Cattan, Alvo Aabloo, Indrek Must

Material-level stiffness modulation allows for the creation of controllable energy-dissipating structures for auxiliary and training exoskeletons and the manipulation of delicate objects and tissues. These use cases require simple control systems and disfavour thermally driven solutions. Many…

Lecture Notes in Computer Science, 2023, Part of the book series: Lecture Notes in Computer Science, following Conference on Biomimetic and Biohybrid Systems, 14157, pp.109-116. ⟨10.1007/978-3-031-38857-6_8⟩. ⟨hal-05495756⟩