Publications

• Communication dans un congrès

New package-free silicon microsensors for infrared and thermal flow measurements. Potential automotive applications

M. Haffar, Yala M. Ait-Hammouda, K. Ziouche, P. Godts, D. Leclercq

Proceedings of 2005 Sensors & Actuators for Advanced Automotive Applications, SENSACT 2005, 2005, Noisy-Le-Grand, France. ⟨hal-00131328⟩

• Article dans une revue

Detection of moving objects and flows in liquids by ultrasonic phase

Y. Pyl'Nov, Vladimir Preobrazhensky, Philippe Pernod

Acoustical Physics, 2005, 51, pp.105-109. ⟨hal-00137663⟩

• Communication dans un congrès

Parametrically phase conjugate waves : applications in nonlinear acoustic imaging and diagnostics

Vladimir Preobrazhensky

Session of the Branch of Physical Sciences of Russian Acoustical Society, 2005, Moscow, Russia. ⟨hal-00137665⟩

• Communication dans un congrès

Nonlinear acoustics of phase conjugate waves

Vladimir Preobrazhensky

General Assembly of the Branch of Physical Sciences of the Russian Academy of Sciences, 2005, Moscow, Russia. ⟨hal-00137667⟩

• Communication dans un congrès

A radio over multimode fibre system based on a LO phase-noise cancellation for 60 GHz WLAN

Christophe Loyez, C. Lethien, N. Deparis, Jean-Pierre Vilcot, Didier Decoster, N. Rolland, P.A. Rolland

2005, 3 pp. ⟨hal-00126764⟩

• Communication dans un congrès

Perfluorinated polymer based graded index fiber in LAN operating at 850 nm

A. Goffin, C. Lethien, C. Vloeberghs, Jean-Pierre Vilcot, Christophe Loyez

Proceedings of the 14th International Conference on Plastic Optical Fiber, 2005, Hong Kong, China. ⟨hal-00131127⟩

• Article dans une revue

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage

The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the…

Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩

• Article dans une revue

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

G. Larrieu, Emmanuel Dubois

This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB MOSFETs are shown to steadily progress with respect to conventional highly doped source/drain with a…

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2720-2726. ⟨10.1109/TED.2005.859703⟩. ⟨hal-00138397⟩

• Article dans une revue

The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0.53Ti0.47O3 films

G.S. Wang, Denis Remiens, Caroline Soyer, El Hadj Dogheche, Eric Cattan

The (1 0 0) oriented LaNiO3 (LNO) films with different thickness were prepared on SiO2/Si substrate by a modified metallorganic decomposition process. PbZr0.53Ti0.47O3 (PZT) films (∼1 μm) subsequently deposited on LNO by modified sol–gel process. The X-ray diffraction measurements show PZT films…

Journal of Crystal Growth, 2005, 284 (1-2), pp.184-189. ⟨10.1016/j.jcrysgro.2005.07.014⟩. ⟨hal-00130818⟩

• Article dans une revue

CBr4 and Be heavily doped InGaAs grown in a production MBE system

S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune, F. Mollot

Journal of Crystal Growth, 2005, 278, pp.600-603. ⟨hal-00154907⟩