Publications

• Communication dans un congrès

Physical analysis of the breakdown phenomenon between single or double step gate recess HEMTs

M. Elkhou, Michel Rousseau, H. Gerard, Jean-Claude de Jaeger

2004, pp.571-574. ⟨hal-00142307⟩

• Communication dans un congrès

3 bit 90° phase shifter using microfluidic technology

L. Le Cloirec, A. Benlarbi-Delai, Bertrand Bocquet

Addressing systems that require broadband devices for high data rate communication or high resolution radar, we develop the concept of a millimeter phase shifter that combines micro strip or coplanar wave guide and microfluidic facilities. To illustrate this approach we built from a simple…

34th European Microwave Conference, Oct 2004, Amsterdam, Netherlands. pp.1161-1164. ⟨hal-00142282⟩

• Communication dans un congrès

Performance improvement of DS-CDMA on the LOS multipath 60 GHz channel using block turbo coding

A. Goalic, W. Sawaya, R. Okouyi, Laurent Clavier

2004, pp.133-136. ⟨hal-00142300⟩

• Communication dans un congrès

Transposition of a base band UWB impulse radio signal at 60 GHz for high data rate multiple access indoor communication systems

N. Deparis, Christophe Loyez, M. Fryziel, N. Rolland, P. Rolland

2004, pp.253-256. ⟨hal-00142278⟩

• Communication dans un congrès

Quasi-particle gap, dielectric properties and electronic correlations in semiconductor nanostructures

Christophe Delerue, Michel Lannoo, Guy Allan

Workshop on Theory and Modeling of Electronic Excitations in Nanoscience, NANOEXC2004, 2004, Acquafredda di Maratea, Italy. ⟨hal-00141287⟩

• Article dans une revue

Evolution of the density of states from a two- to a zero-dimensional semiconductor

Zeger Hens, B. Grandidier, D. Deresmes, Guy Allan, Christophe Delerue, Didier Stiévenard, Daniel Vanmaekelbergh

Lead selenide nanocrystals have been electrodeposited on gold(111) with a high degree of control over their dimensions, giving rise to isolated nanocrystals with different edge-to-height aspect ratio. The electron density of states (DOS) of individual nanocrystals as a function of their aspect…

EPL - Europhysics Letters, 2004, 65, pp.809-815. ⟨10.1209/epl/i2003-10130-3⟩. ⟨hal-00141246⟩

• Communication dans un congrès

Two-photon absorption in InP substrates in the 1.55 µm range

D. Vignaud, Jean-Francois Lampin, F. Mollot

2004, pp.134-137. ⟨hal-00140715⟩

• Article dans une revue

Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, C. Chaix, F. Mollot

The rapid setup of the molecular beam epitaxy (MBE) growth process for GaInP/GaAs heterostructure bipolar transistor (HBT) in an all solid-source multiwafer production MBE system is reported. The first 100×100 μm2 large area test structures enable determination of the static gain, which is above…

Journal of Vacuum Science and Technology, 2004, 22 (3), pp.1444-1449. ⟨10.1116/1.1738665⟩. ⟨hal-00162756⟩

• Article dans une revue

Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors (MOSFETs)

Emmanuel Dubois, G. Larrieu

Journal of Applied Physics, 2004, 96, pp.729-737. ⟨hal-00140973⟩

• Article dans une revue

Micro-transformateur piézoélectrique intégré sur substrat en silicium

Dejan Vasic, François Costa, Emmanuel Sarraute, Patrick Sangouard, Eric Cattan

Revue Internationale de Génie Electrique, 2004, 7 (3-4), pp.315-332. ⟨hal-00811665⟩