Publications

Affichage de 13851 à 13860 sur 16302


  • Communication dans un congrès

Analysis of right- and left-handed dispersive transmission lines at terahertz frequencies

Jean-Francois Lampin, T. Crepin, M. Perrin, M. Ternisien, L. Desplanque, F. Mollot, D. Lippens

2004, pp.101-102. ⟨hal-00140722⟩

  • Communication dans un congrès

A multi-mode continuously-tunable lowpass filter for zero-IF mobile applications

D. Chamla, A. Kaiser, A. Cathelin, D. Belot

2004, pp.95-98. ⟨hal-00140982⟩

  • Communication dans un congrès

Optimisation and simulation of an alternative nano-flash memory : the SASEM device

Christophe Krzeminski, Emmanuel Dubois, Xing Tang, N. Reckinger, A. Crahay, V. Bayot

2004, pp.45-50. ⟨hal-00140991⟩

  • Communication dans un congrès

Predictive modelling of the fatigue phenomenon for polycristalline structural layers

O. Millet, Pierre Bertrand, Bernard Legrand, D. Collard, L. Buchaillot

2004, pp.145-148. ⟨hal-00141028⟩

  • Communication dans un congrès

RF and noise properties of SOI MOSFETs, including the influence of a direct tunneling gate current

Francois Danneville, G. Pailloncy, Gilles Dambrine, B. Iniguez

2004, pp.103-110. ⟨hal-00154886⟩

  • Article dans une revue

Hot carrier aging degradation phenomena in GaN based MESFETs

F. Rampazzo, G. Pierobon, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

Microelectronics Reliability, 2004, 44, pp.1375-1380. ⟨hal-00154890⟩

  • Article dans une revue

Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert, N. Labat, A. Curutchet, A. Touboul, Christophe Gaquière, A. Minko

Fluctuation and Noise Letters, 2004, 4, pp.L319-L328. ⟨hal-00162793⟩

  • Communication dans un congrès

Noise modeling and performance in 0.15 µm fully depleted SOI MOSFET

G. Pailloncy, B. Iniguez, Gilles Dambrine, M. Dehan, J.P. Raskin, H. Matsuhashi, P. Delatte, Francois Danneville

2004, pp.122-130. ⟨hal-00133895⟩