Publications

Affichage de 14071 à 14080 sur 16255


  • Communication dans un congrès

Acoustic wave propagation in functionally graded material (FGM) cylinders

L. Elmaimouni, Jean-Etienne Lefebvre, Tadeusz Gryba, V. Zhang

2004, pp.1199-1200. ⟨hal-00142049⟩

  • Autre publication scientifique

Conception et réalisation de transistors sur substrat InP pour amplification de puissance en bande W

F Medjdoub

2004. ⟨hal-00141953⟩

  • Communication dans un congrès

Dual antenna array systems in tunnels : propagation channel properties

M. Lienard, Pierre Degauque

IEEE International Symposium on Antennas and Propagation, 2004, Monterey, CA, United States. ⟨hal-00142020⟩

  • Communication dans un congrès

Radiation of directional seismic sources within a layered half-space

Madjid Berraki, Bertrand Dubus, Axelle Baroni

Congrès Français d'Acoustique CFA, Mar 2004, Strasbourg, France. pp.145-146. ⟨hal-00142047⟩

  • Communication dans un congrès

Transmission on indoor power lines : from a stochastic channel model to the optimization and performances evaluation of multicarrier systems

Virginie Degardin, M. Lienard, Pierre Degauque

COST 286 Meeting, 2004, Liège, Belgium. ⟨hal-00142018⟩

  • Article dans une revue

AlGaN/GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

A. Minko, Virginie Hoel, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, Christophe Gaquière, D. Theron, Jean-Claude de Jaeger, H. Lahreche, L. Wedzikowski, R. Langer, P. Bove

IEEE Electron Device Letters, 2004, 25, pp.453-455. ⟨hal-00141952⟩

  • Communication dans un congrès

Modélisation des pertes de propagation par rayonnement dans un matériau - Application à la caractérisation micro-onde

D. Glay, T. Lasri

2004, pp.Session 9. ⟨hal-00142052⟩

  • Communication dans un congrès

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron…

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

  • Communication dans un congrès

Low frequency noise and transport mechanisms in AlGaN/GaN HEMT devices

Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, Robert Plana, Jean-Claude de Jaeger, Marie Germain, S. Delage, Jacques Graffeuil

European Microwave Week, 2004, Amsterdam, Netherlands. ⟨hal-00141963⟩

  • Article dans une revue

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, B. Colombeau

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99. ⟨hal-00140975⟩