Publications

• COMM

Property comparison of 2 mm thick cymbal and double dipper transducers

S.E. Danley, R.E. Newnham, D.C. Markley, R.J. Meyer, Anne-Christine Hladky

2003 US Navy Workshop on Acoustic Transduction Materials and Devices, 2003, State College, PA, United States. ⟨hal-00145967⟩

• ART

Ballistic nanodevices for terahertz data processing : Monte Carlo simulations

J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, Yannick Roelens, S. Bollaert, A. Cappy

Nanotechnology, 2003, 14, pp.117-122. ⟨hal-00145979⟩

• ART

Microscopic modeling of nonlinear transport in ballistic nanodevices

J. Mateos, B.G. Vasallo, D. Pardo, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy

IEEE Transactions on Electron Devices, 2003, 50, pp.1897-1905. ⟨hal-00145980⟩

• COMM

Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies

Stéphane Lenfant, Dominique Vuillaume, Christophe Krzeminski, Guy Allan, Christophe Delerue, F. Tran Van, C. Chevrot

7th European Conference on Molecular Electronics, ECME 2003, Sep 2003, Avignon, France. ⟨hal-00146179⟩

• ART

Experimental and theoretical investigation of the GaInAs surface reactivity to phosphorus

X. Wallart, C. Priester

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.235314/1-10. ⟨hal-00146112⟩

• COMM

Optimisation and modelling of pentacene-based organic thin film on high-k gate dielectrics

K. Lmimouni, M. Berliocchi, C. Dufour, Denis Remiens, D. Vuillaume, G. Velu, C. Legrand

7th European Conference on Molecular Electronics, ECME 2003, 2003, Avignon, France. ⟨hal-00146178⟩

• COMM

Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Dipersio, Dominique Vignaud, Jean-Louis Codron

InAlAs/InGaAs metamorphic HEMTs on GaAs have demonstrated low noise figures and high output powers with obvious advantages over structures grown on InP substrates. Indeed, from a processing viewpoint, the GaAs substrate is less brittle, less expensive, available in size up to 6 inches in diameter…

International Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩. ⟨hal-00146110⟩

• OTHER

Caractérisation électro-opique de composants térahertz par échantillonnage Franz-Keldysh subpicoseconde

L. Desplanque

2003. ⟨hal-00146113⟩

• COMM

Noise modelling of 0.25 µm fully depleted SOI MOSFETs

G. Pailloncy, Gilles Dambrine, Francois Danneville, B. Iniguez, J.P. Raskin

2003, pp.577-580. ⟨hal-00145992⟩

• COMM

Quantum calculation of leakage current in stacked gate dielectrics for nano-MOS structures

Eric Lheurette, M. Le Roy, O. Vanbésien, D. Lippens

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146102⟩