Publications

• ART

Microscopic modeling of nonlinear transport in ballistic nanodevices

J. Mateos, B.G. Vasallo, D. Pardo, J.S. Galloo, S. Bollaert, Yannick Roelens, A. Cappy

IEEE Transactions on Electron Devices, 2003, 50, pp.1897-1905. ⟨hal-00145980⟩

• COMM

Quantum calculation of leakage current in stacked gate dielectrics for nano-MOS structures

Eric Lheurette, M. Le Roy, O. Vanbésien, D. Lippens

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146102⟩

• COMM

Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Dipersio, Dominique Vignaud, Jean-Louis Codron

InAlAs/InGaAs metamorphic HEMTs on GaAs have demonstrated low noise figures and high output powers with obvious advantages over structures grown on InP substrates. Indeed, from a processing viewpoint, the GaAs substrate is less brittle, less expensive, available in size up to 6 inches in diameter…

International Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩. ⟨hal-00146110⟩

• ART

Experimental and theoretical investigation of the GaInAs surface reactivity to phosphorus

X. Wallart, C. Priester

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.235314/1-10. ⟨hal-00146112⟩

• COMM

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩

• COMM

IEMN : a center of the french network for basic research in Micro@Nano technology

A. Cappy

Trends in NanoTechnology, TNT 2003, 2003, Salamanca, Spain. ⟨hal-00146046⟩

• ART

MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, Virginie Hoel, A. Minko, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, B. Dessertenne, S. Cassette, Et Al.

Journal of Crystal Growth, 2003, 251, pp.811-815. ⟨hal-00146661⟩

• COMM

Etude physique du phénomène de claquage par avalanche dans les transistors à effet de champ

M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger

2003, pp.2D-21. ⟨hal-00146663⟩

• COMM

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide

Marie-Antoinette Di Forte-Poisson, Maurice Tordjman, A. Romann, M. Magis, Raphaël Aubry, Sylvain Laurent Delage, J. Di Persio, B. Grimbert, Christophe Gaquière

Proceedings of the Fifth International Conference on Nitride Semiconductors, ICNS-5, 2003, Nara, Japan. ⟨hal-00146685⟩

• ART

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical…

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩