Publications

• Communication dans un congrès

Property comparison of 2 mm thick cymbal and double dipper transducers

S.E. Danley, R.E. Newnham, D.C. Markley, R.J. Meyer, Anne-Christine Hladky

2003 US Navy Workshop on Acoustic Transduction Materials and Devices, 2003, State College, PA, United States. ⟨hal-00145967⟩

• Communication dans un congrès

Propriétés vibratoires d'une chaîne finie de sphères couplées

Anne-Christine Hladky, Arnaud Devos, M. de Billy

Actes des Journées du GDR 2501 : Etude de la propagation ultrasonore en milieux inhomogènes en vue du contrôle non destructif, 2003, Aussois, France. ⟨hal-00145975⟩

• Communication dans un congrès

Noise modelling of 0.25 µm fully depleted SOI MOSFETs

G. Pailloncy, Gilles Dambrine, Francois Danneville, B. Iniguez, J.P. Raskin

2003, pp.577-580. ⟨hal-00145992⟩

• Communication dans un congrès

Double-gate HEMTs on transferred substrate

Nicolas Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2003, pp.118-121. ⟨hal-00145995⟩

• Communication dans un congrès

Fabrication of nano-ballistic devices using high resolution process

Emmanuelle Pichonat, Jean-Sebastien Galloo, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146012⟩

• Communication dans un congrès

Validation d'un modèle non linéaire pour MOSFET au moyen des mesures grand signal

A. Siligaris, Gilles Dambrine, D. Schreurs, Francois Danneville

2003, pp.6A-4. ⟨hal-00146013⟩

• Communication dans un congrès

Quantum calculation of leakage current in stacked gate dielectrics for nano-MOS structures

Eric Lheurette, M. Le Roy, O. Vanbésien, D. Lippens

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146102⟩

• Communication dans un congrès

Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Dipersio, Dominique Vignaud, Jean-Louis Codron

InAlAs/InGaAs metamorphic HEMTs on GaAs have demonstrated low noise figures and high output powers with obvious advantages over structures grown on InP substrates. Indeed, from a processing viewpoint, the GaAs substrate is less brittle, less expensive, available in size up to 6 inches in diameter…

International Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩. ⟨hal-00146110⟩

• Article dans une revue

Experimental and theoretical investigation of the GaInAs surface reactivity to phosphorus

X. Wallart, C. Priester

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.235314/1-10. ⟨hal-00146112⟩

• Communication dans un congrès

Novel design for semiconductor optical filters using apodised Bragg gratings

S. Garidel, Jean-Pierre Vilcot, Didier Decoster

NEFERTITI Workshop on Recent advances in all-optical processing of microwave and RF signals & Fiber radio systems, 2003, Valence, France. ⟨hal-00146554⟩