Publications

• Communication dans un congrès

RF and noise properties of SOI MOSFETs, including the influence of a direct tunneling gate current

Francois Danneville, G. Pailloncy, Gilles Dambrine, B. Iniguez

2004, pp.103-110. ⟨hal-00154886⟩

• Article dans une revue

Hot carrier aging degradation phenomena in GaN based MESFETs

F. Rampazzo, G. Pierobon, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

Microelectronics Reliability, 2004, 44, pp.1375-1380. ⟨hal-00154890⟩

• Article dans une revue

Raman characterization of Mg+ ion-implanted GaN

B. Boudart, Y. Guhel, J. C. Pesant, P. Dhamelincourt, M. A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm−2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes…

Journal of Physics: Condensed Matter, 2003, 16 (2), pp.S49. ⟨10.1088/0953-8984/16/2/006⟩. ⟨hal-02936052⟩

• Thèse

Gravure par faisceau d'ions de films minces de titano-zirconate de plomp (PZT) : étude des dégradations engendrées et contribution à l'intégration aux microsystèmes, Ion beam etching of lead titanate-zirconate (PZT) thin films : study of damages induced and contribution to the integration in microsystems

Caroline Soyer

Ces travaux, relatifs à la gravure par faisceau d'ions de films minces de PZT, présentent un ensemble de résultats pouvant être scindés en deux parties. Tout d'abord, nous avons mené une étude originale dont le but est de tenter d'appréhender les mécanismes d'interactions entre…, First of all, we have carried out an original study of which the aim is to try to understand the mechanisms of interactions between an ion beam (reactive or not) and the PZT surface. We have underlined various degradations of material, as well microstructural as electrical. These damages evolve…

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2003. Français. ⟨NNT : 2003VALE0038⟩. ⟨hal-00162746⟩

• Pré-publication, Document de travail

Dispersive charge transport along the surface of an insulating layer observed by Electrostatic Force Microscopy

J. S. Lambert, G. de Loubens, C. Guthmann, M. Saint-Jean, Thierry Melin

We report the observation in the direct space of the transport of a few thousand charges submitted to atunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observedusing the same Electrostatic Force Microscope. During the time range accessible to our…

2003. ⟨hal-00000962⟩

• Article dans une revue

Two-dimensional microfabricated sources for nanoelectrospray

Séverine Le Gac, S. Arscott, Cécile Cren-Olivé, Christian Rolando

Journal of Mass Spectrometry, 2003, 38 (12), pp.1259-1264. ⟨10.1002/jms.580⟩. ⟨hal-02347837⟩

• Chapitre d'ouvrage

Chapter 6 - Structural health monitoring evaluation tests

P. Lloyd, R. Pressland, J. Mcfeat, I. Read, P. Foote, J.P. Dupuis, E. O'Brien, L. Reithler, Sébastien Grondel, Christophe Delebarre, K. Levin, C. Boller, C. Biemans, W. Staszewski

STASZEWSKI W., BOLLER C., TOMLINSON G.R. Health monitoring of aerospace structures : smart sensor technologies and signal processing, John Wiley & Sons, pp.207-260, 2003. ⟨hal-00131715⟩

• Chapitre d'ouvrage

Damage detection using stress and ultrasonic waves

Wieslaw Staszewski, Christian Boller, Sébastien Grondel, C. Biemans, E. O'Brien, Christophe Delebarre, G. R. Tomlinson

Health monitoring of aerospace structures: smart sensor technologies and signal processing, John Wiley & Sons; Wiley, pp.125-162, 2003, ⟨10.1002/0470092866.ch4⟩. ⟨hal-00131712⟩

• Article dans une revue

Epitaxial growth and ferroelectric properties of (115) SrBi2Nb2O9 thin films deposited by pulsed laser deposition on epitaxial (111) Pt electrode

Jean-René Duclere, Maryline Guilloux-Viry, V. Bouquet, A. Perrin, Eric Cattan, Caroline Soyer, Denis Remiens

Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on Pt(111) bottom electrode epitaxially grown by dc sputtering on sapphire(0001). Four-circle x-ray diffraction reveals the epitaxial growth of the SrBi2Nb2O9(115)/Pt(111) bilayers. The influence of the Pt bottom electrode…

Applied Physics Letters, 2003, 83 (26), pp.5500-5502. ⟨10.1063/1.1634387⟩. ⟨hal-00146477⟩

• Article dans une revue

Transmission and filtering in photonic circuits: effects of absorption and amplification

B. Djafari-Rouhani, E.H. El Boudouti, Abdellatif Akjouj, J.O. Vasseur, Leonard Dobrzynski

Progress in Surface Science, 2003, 74 (1-8), pp.389-404. ⟨10.1016/j.progsurf.2003.08.030⟩. ⟨hal-04070821⟩