Publications

• Article dans une revue

Lead Zirconate Titanate (PZT) Films Deposited by a Hydrothermal Method

Sébastien Euphrasie, Sylvie Daviero-Minaud, Philippe Pernod

Solid State Sciences, 2003, 5 (11-12), pp.1499-1504. ⟨hal-00258427⟩

• Article dans une revue

Reactive ion beam etching of PZT thin films

Caroline Soyer, Eric Cattan, Denis Remiens

Lead titano-zirconate ferroelectric thin films have developed a great interest for their applications in memory devices, and more recently in microelectromechanical systems because of their interesting piezoelectric properties. The patterning has become an essential element for PZT integration in…

Ferroelectrics, 2003, 288 (1), pp.253-263. ⟨10.1080/00150190390211530⟩. ⟨hal-00146478⟩

• Communication dans un congrès

Modeling of failure mechanisms for optimized MEMS CAD : design, fabrication and characterization of in situ test benches

Olivier Millet, Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot

This work considers the reliability of surface microfabricated structures and particularly the dynamic response of structural layers during operations, in order to develop a statistical modelling of failure mechanisms for micro-actuator. In situ test benches have been designed and fabricated…

12th International Conference on Solid-State Sensors, Jun 2003, Boston, United States. pp.1578-1581, ⟨10.1109/SENSOR.2003.1217081⟩. ⟨hal-00146440⟩

• Article dans une revue

Nouveaux matériaux actifs nanostructurés à magnétostriction géante et nouveaux modes de commande de microactionneurs, New nanostructured active materials with giant magnetostriction and new driving modes of microactuators

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Steve Masson, Jamal Ben Youssef, Henri Le Gall

Cet article traite du développement de films minces magnétostrictifs dans lesquels une instabilité magnétique de type Transition de Réorientation de Spin (TRS) peut être induite artificiellement grâce à la nanostructuration du film actif. La TRS est utilisée pour l'amplification géante de la…, This paper deals with the development of magnetostrictive thin films in which a magnetic instability of the Spin Reorientation Transition (SRT) type could be artificially induced by taking advantage of the nanostructured character of the films. This instability is used in order to achieve a great…

Mechanics & Industry, 2003, 4 (3), pp.169-174. ⟨10.1016/S1296-2139(03)00044-7⟩. ⟨hal-00146127⟩

• Article dans une revue

Micromachined 2D nanoelectrospray emitter

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

A novel 2D nanoelectrospray emitter for mass spectrometry has been micromachined using photoresist SU-8 on silicon substrates using one-step photomasking. The design contains a reservoir, a capillary slot and an emitter tip. The emitters were successfully tested on an ion trap mass spectrometer. A…

Electronics Letters, 2003, 39 (24), pp.1702. ⟨10.1049/el:20031099⟩. ⟨hal-02347842⟩

• Article dans une revue

Path delay model based on stable distribution for the 60GHz indoor channel

N. Azzaoui, Laurent Clavier, R. Sabre

IEEE GLOBECOM, 2003, pp.441-467. ⟨hal-01077681⟩

• Communication dans un congrès

Assessment of deteriorated concrete cover

F. Buyle-Bodin, Bogdan Piwakowski, A. Fnine, M. Goueygou, S. Ould-Naffa

Proceedings of the 2003 Workshop on Nondestructive Testing of Materials, Structures and Textures, NTM'03, 2003, Warsaw, Poland. ⟨hal-00250184⟩

• Article dans une revue

A new empirical nonlinear model for sub-250 nm channel MOSFET

Alexandre Siligaris, Gilles Dambrine, Dominique Schreurs, Francois Danneville

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge…

IEEE Microwave and Wireless Components Letters, 2003, 13 (10), pp.449-451. ⟨10.1109/LMWC.2003.815687⟩. ⟨hal-00145981⟩

• Article dans une revue

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

E. Lampin, Fuccio Cristiano, Y. Lamrani, Alain Claverie, B. Colombeau, N.E.B. Cowern

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method…

Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩. ⟨hal-00146393⟩

• Communication dans un congrès

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

E. Lefebvre, M. Zaknoune, Y. Cordier, F. Mollot

2003, pp.409-412. ⟨hal-00162725⟩