Publications

• Communication dans un congrès

Low-frequency drain noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert, N. Labat, A. Curutchet, A. Touboul, Christophe Gaquière, A. Minko

2003, pp.342-349. ⟨hal-00162738⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design…

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Article dans une revue

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical…

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩

• Communication dans un congrès

HEMT technology for power applications at 94 GHz and above

F Medjdoub, M. Zaknoune, X. Wallart, F. Dessenne, Jean-Claude de Jaeger, D. Theron

12th European Workshop on Heterostructure Technology, heTech 2003, 2003, San Rafael, Spain. ⟨hal-00146695⟩

• Article dans une revue

Lead Zirconate Titanate (PZT) Films Deposited by a Hydrothermal Method

Sébastien Euphrasie, Sylvie Daviero-Minaud, Philippe Pernod

Solid State Sciences, 2003, 5 (11-12), pp.1499-1504. ⟨hal-00258427⟩

• Communication dans un congrès

Amélioration du fmax des HEMTs InAlAs/InGaAs sur substrat d'InP de longueur de grille 70nm par optimisation de la structure de couche

I. Duszynski, T. Parenty, S. Bollaert, H. Happy, J. Mateos, X. Wallart, A. Cappy

2003, pp.2B1-1. ⟨hal-00145993⟩

• Communication dans un congrès

Composants balistiques pour applications térahertz

S. Bollaert, Yannick Roelens, Jean-Sebastien Galloo, Isabelle Huynen, Hervé Boutry, Javier Mateos

GDR Nanoélectronique : 1ères Journées Nationales Composants pour la micro et nano-électronique, 4èmes Journées Nationales Hétérostructures de semiconducteurs IV-IV, 2003, Grenoble, France. ⟨hal-00146019⟩

• Communication dans un congrès

Détermination des paramètres limitant la montée des MOSFETs sub-100nm

M. Vanmackelberg, Sylvie Lepilliet, C. Raynaud, M. Dehan, Gilles Dambrine

2003, pp.1D-5. ⟨hal-00145999⟩

• Article dans une revue

Wide band tapering and filtering at millimeter wavelengths for harmonic multiplication using finline technology

T. Decoopman, X. Melique, O. Vanbésien, D. Lippens

IEEE Microwave and Wireless Components Letters, 2003, 13, pp.172-174. ⟨hal-00146087⟩

• Communication dans un congrès

Phase sensitivity of low frequency ultrasound wave emitted by a nonlinear interaction of phase conjugate acoustic beams

Philippe Pernod, Vladimir Preobrazhensky, Y.U. Pylnov

2003, pp.855-857. ⟨hal-00146131⟩