Publications

• Article dans une revue

Long dephasing time and high temperature ballistic transport in an InGaAs quantum dot

Benoit Hackens, Sébastien Faniel, François Delfosse, Cédric Gustin, Hervé Boutry, Isabelle Huynen, X. Wallart, S. Bollaert, A. Cappy

We report on measurements of the magnetoconductance of an open circular InGaAs quantum dot between 1.3 and 204 K. We observe two types of magnetoconductance 5uctuations: universal conductance 5uctuations (UCFs), and “focusing” 5uctuations related to ballistic trajectories between openings. The…

Physica E: Low-dimensional Systems and Nanostructures, 2003, 17, pp.143-146. ⟨10.1016/S1386-9477(02)00713-0⟩. ⟨hal-00145986⟩

• Communication dans un congrès

Room temperature nonlinear transport in InGaAs/InAlAs based ballistic nanodevices

Javier Mateos, B.G. Vasallo, Daniel Pardo, Tomás González, Hervé Boutry, Benoit Hackens, Vincent Bayot, Lukasz Bednarz, Philippe Simon, Isabelle Huynen, Jean-Sebastien Galloo, Emmanuelle Pichonat, Yannick Roelens, X. Wallart, S. Bollaert, A. Cappy

International Conference onIndium Phosphide and Related Materials, May 2003, Barbara, CA, France. pp.484-487. ⟨hal-00145996⟩

• Article dans une revue

Measurement of semiconductor optical index variation in photonic devices based on optical heterodyning microwave experiments

Samuel Dupont, Karine Blary, Jean-Pierre Vilcot, Didier Decoster, Hongwu Li, Jean Chazelas

Electronics Letters, 2003, 39, pp.295-296. ⟨hal-00146499⟩

• Article dans une revue

Path delay model based on stable distribution for the 60GHz indoor channel

N. Azzaoui, Laurent Clavier, R. Sabre

IEEE GLOBECOM, 2003, pp.441-467. ⟨hal-01077681⟩

• Article dans une revue

A new empirical nonlinear model for sub-250 nm channel MOSFET

Alexandre Siligaris, Gilles Dambrine, Dominique Schreurs, Francois Danneville

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge…

IEEE Microwave and Wireless Components Letters, 2003, 13 (10), pp.449-451. ⟨10.1109/LMWC.2003.815687⟩. ⟨hal-00145981⟩

• Communication dans un congrès

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

E. Lefebvre, M. Zaknoune, Y. Cordier, F. Mollot

2003, pp.409-412. ⟨hal-00162725⟩

• Communication dans un congrès

Assessment of deteriorated concrete cover

F. Buyle-Bodin, Bogdan Piwakowski, A. Fnine, M. Goueygou, S. Ould-Naffa

Proceedings of the 2003 Workshop on Nondestructive Testing of Materials, Structures and Textures, NTM'03, 2003, Warsaw, Poland. ⟨hal-00250184⟩

• Communication dans un congrès

Sommation optique de signaux hyperfréquences

G. Ulliac, N. Breuil, C. Fourdin, P. Nicole, Jean-Pierre Vilcot, Didier Decoster, J. Chazelas

Club optique microonde, 2003, Villeneuve d'Ascq, France. ⟨hal-00146585⟩

• Communication dans un congrès

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, Emmanuel Dubois, X. Wallart

European Materials Research Society Fall Meeting, 2003, Warsaw, Poland. ⟨hal-00146424⟩

• Communication dans un congrès

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, Bernard Colombeau

European Materials Research Society Spring Meeting, 2003, Strasbourg, France. ⟨hal-00146423⟩