Publications

• Article dans une revue

Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy

D. Vignaud, F. Mollot

The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. The parameters involved in the model solid theory were masured…

Journal of Applied Physics, 2003, 93 (1), pp.384. ⟨10.1063/1.1528309⟩. ⟨hal-00018496⟩

• Communication dans un congrès

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

E. Lefebvre, M. Zaknoune, Y. Cordier, F. Mollot

2003, pp.409-412. ⟨hal-00162725⟩

• Article dans une revue

Nouveaux matériaux actifs nanostructurés à magnétostriction géante et nouveaux modes de commande de microactionneurs, New nanostructured active materials with giant magnetostriction and new driving modes of microactuators

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Steve Masson, Jamal Ben Youssef, Henri Le Gall

Cet article traite du développement de films minces magnétostrictifs dans lesquels une instabilité magnétique de type Transition de Réorientation de Spin (TRS) peut être induite artificiellement grâce à la nanostructuration du film actif. La TRS est utilisée pour l'amplification géante de la…, This paper deals with the development of magnetostrictive thin films in which a magnetic instability of the Spin Reorientation Transition (SRT) type could be artificially induced by taking advantage of the nanostructured character of the films. This instability is used in order to achieve a great…

Mechanics & Industry, 2003, 4 (3), pp.169-174. ⟨10.1016/S1296-2139(03)00044-7⟩. ⟨hal-00146127⟩

• Article dans une revue

A new empirical nonlinear model for sub-250 nm channel MOSFET

Alexandre Siligaris, Gilles Dambrine, Dominique Schreurs, Francois Danneville

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge…

IEEE Microwave and Wireless Components Letters, 2003, 13 (10), pp.449-451. ⟨10.1109/LMWC.2003.815687⟩. ⟨hal-00145981⟩

• Article dans une revue

Reactive ion beam etching of PZT thin films

Caroline Soyer, Eric Cattan, Denis Remiens

Lead titano-zirconate ferroelectric thin films have developed a great interest for their applications in memory devices, and more recently in microelectromechanical systems because of their interesting piezoelectric properties. The patterning has become an essential element for PZT integration in…

Ferroelectrics, 2003, 288 (1), pp.253-263. ⟨10.1080/00150190390211530⟩. ⟨hal-00146478⟩

• Communication dans un congrès

Modeling of failure mechanisms for optimized MEMS CAD : design, fabrication and characterization of in situ test benches

Olivier Millet, Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot

This work considers the reliability of surface microfabricated structures and particularly the dynamic response of structural layers during operations, in order to develop a statistical modelling of failure mechanisms for micro-actuator. In situ test benches have been designed and fabricated…

12th International Conference on Solid-State Sensors, Jun 2003, Boston, United States. pp.1578-1581, ⟨10.1109/SENSOR.2003.1217081⟩. ⟨hal-00146440⟩

• Communication dans un congrès

Impact of down scaling on high frequency noise performance of bulk and SOI MOSFETs

Gilles Dambrine, C. Raynaud, M. Vanmackelberg, Francois Danneville, G. Pailloncy, Sylvie Lepilliet, J.P. Raskin

SPIE Fluctuations and Noise Symposium, Noise in Devices and Circuits, 2003, Sante Fe, NM, United States. ⟨hal-00146001⟩

• Article dans une revue

Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs

A. Sleiman, A. Di Carlo, P. Lugli, G. Meneghesso, E. Zanoni, Jean-Luc Thobel

IEEE Transactions on Electron Devices, 2003, 50, pp.2009-2014. ⟨hal-00146070⟩

• Article dans une revue

What are the limiting parameters of deep-submicron MOSFETs for high frequency applications ?

Gilles Dambrine, C. Raynaud, D. Lederer, M. Dehan, O. Rozeaux, M. Vanmackelberg, Francois Danneville, Sylvie Lepilliet, J.P. Raskin

IEEE Electron Device Letters, 2003, 24, pp.189-191. ⟨hal-00145984⟩

• Communication dans un congrès

An electromechanical ring lead zirconate titanate (PZT) actuator used as a spring

J.C. Debus, M. Lippert, Anne-Christine Hladky, M. Brussieux

2003 US Navy Workshop on Acoustic Transduction Materials and Devices, 2003, State College, PA, United States. ⟨hal-00145965⟩