Publications

• Article dans une revue

Optical transitions in few-electron artificial atoms strongly confined in ZnO nanocrystals

Alexander Germeau, Aarnoud L. Roest, Daniel Vanmaekelbergh, Guy Allan, Christophe Delerue, Eric A. Meulenkamp

We have studied the optical transitions in artificial atoms consisting of one to ten electrons occupying the conduction levels in ZnO nanocrystals. We analyzed near IR absorption spectra of assemblies of weakly coupled ZnO nanocrystals for a gradually increasing electron number and found four…

Physical Review Letters, 2003, 90, pp.097401/1-4. ⟨10.1103/PhysRevLett.90.097401⟩. ⟨hal-00146610⟩

• Article dans une revue

Near-Field Coupling Between a Printed Antenna and a Fabry-Perot Resonator : Experimental Study of the Radiation Properties at Millimeter Wave Frequencies

Ronan Sauleau, Philippe Coquet, T. Matsui

Microwave and Optical Technology Letters, 2003, 38 (6), pp.438-443. ⟨hal-00553217⟩

• Article dans une revue

M-line spectroscopy for optical analysis of thick LiNbO3 layers grown on sapphire substrates by radio-frequency multistep sputtering

El Hadj Dogheche, X. Lansiaux, Denis Remiens

Journal of Applied Physics, 2003, 93 (2), pp.1165-1168. ⟨10.1063/1.1530367⟩. ⟨hal-00146473⟩

• Article dans une revue

Mechanical analysis of interconnect structures using process simulation

V. Senez, T. Hoffmann, P. Le Duc, F. Murray

Journal of Applied Physics, 2003, 93, pp.6039-6049. ⟨hal-00146398⟩

• Communication dans un congrès

Résonateurs de Perot-Fabry accordables en fréquence par cristal liquide

Ronan Sauleau, Nicolas Tentillier, Bertrand Splingart, Coquet Philippe

Treizièmes Journées Nationales Micro-ondes (JNM 2003), May 2003, Lille, France. 4 p. ⟨hal-00553231⟩

• Article dans une revue

Lead Zirconate Titanate (PZT) Films Deposited by a Hydrothermal Method

Sébastien Euphrasie, Sylvie Daviero-Minaud, Philippe Pernod

Solid State Sciences, 2003, 5 (11-12), pp.1499-1504. ⟨hal-00258427⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design…

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Article dans une revue

Terahertz frequency generation : electronic and photonic approach

D. Lippens

La Revue de l'électricité et de l'électronique, 2003, 1, pp.25-31. ⟨hal-00162726⟩

• Communication dans un congrès

Low-frequency drain noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert, N. Labat, A. Curutchet, A. Touboul, Christophe Gaquière, A. Minko

2003, pp.342-349. ⟨hal-00162738⟩