Publications

• Communication dans un congrès

SU-8 technology and monolithic columns for integration in a biological lab-on-chip

Julien Carlier, S. Le Gac, S. Arscott, V. Thomy, J.C. Fourrier, F. Caron, C. Cren-Olive, C. Rolando, J.C. Camart, P. Tabourier

2003, pp.315-318. ⟨hal-00146385⟩

• Article dans une revue

Experimental and theoretical investigation of the GaInAs surface reactivity to phosphorus

X. Wallart, C. Priester

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.235314/1-10. ⟨hal-00146112⟩

• Autre publication scientifique

Caractérisation électro-opique de composants térahertz par échantillonnage Franz-Keldysh subpicoseconde

L. Desplanque

2003. ⟨hal-00146113⟩

• Communication dans un congrès

Contrôle des diagrammes de rayonnement par radômes métallo-diélectriques et métamatériaux

T. Akalin, J. Ciberta, R. Lalinde, O. Vanbésien, E. Estebe, D. Lippens

2003, pp.5D-4. ⟨hal-00146085⟩

• Communication dans un congrès

Optimisation and modelling of pentacene-based organic thin film on high-k gate dielectrics

K. Lmimouni, M. Berliocchi, C. Dufour, Denis Remiens, D. Vuillaume, G. Velu, C. Legrand

7th European Conference on Molecular Electronics, ECME 2003, 2003, Avignon, France. ⟨hal-00146178⟩

• Article dans une revue

Influence on the step covering on fatigue phenomenon for polycrystalline silicon MEMS

O. Millet, Bernard Legrand, D. Collard, L. Buchaillot

Japanese Journal of Applied Physics, 2003, 41, pp.L1339-L1341. ⟨hal-00146435⟩

• Communication dans un congrès

New Schottky source/drain architectures

Emmanuel Dubois

Workshop Micro et Nanoélectronique, 2003, Crolles, France. ⟨hal-00146417⟩

• Article dans une revue

Feedback of MEMS reliability study on the design stage : a step toward reliability aided design (RAD)

L. Buchaillot

Microelectronics Reliability, 2003, 43, pp.1919-1928. ⟨hal-00146437⟩

• Communication dans un congrès

2½ D microfabricated nib-like sources for nanoelectrospray applications

S. Le Gac, S. Arscott, C. Rolando

2003, pp.1211-1214. ⟨hal-00146442⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩