Publications

• Communication dans un congrès

Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experiments

S. Shapoval, V. Gurtovoi, A. Kovalchuk, L. Eastman, A. Vertjachih, Christophe Gaquière, D. Theron

2003, pp.90-93. ⟨hal-00149939⟩

• Article dans une revue

Nouveaux matériaux actifs nanostructurés à magnétostriction géante et nouveaux modes de commande de microactionneurs, New nanostructured active materials with giant magnetostriction and new driving modes of microactuators

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Steve Masson, Jamal Ben Youssef, Henri Le Gall

Cet article traite du développement de films minces magnétostrictifs dans lesquels une instabilité magnétique de type Transition de Réorientation de Spin (TRS) peut être induite artificiellement grâce à la nanostructuration du film actif. La TRS est utilisée pour l'amplification géante de la…, This paper deals with the development of magnetostrictive thin films in which a magnetic instability of the Spin Reorientation Transition (SRT) type could be artificially induced by taking advantage of the nanostructured character of the films. This instability is used in order to achieve a great…

Mechanics & Industry, 2003, 4 (3), pp.169-174. ⟨10.1016/S1296-2139(03)00044-7⟩. ⟨hal-00146127⟩

• Article dans une revue

Phase conjugation of second acoustic harmonic and retrofocusing in nonlinear inhomogeneous medium

Vladimir Preobrazhensky, Philippe Pernod

Physics of Wave Phenomena, 2003, 11, pp.63-67. ⟨hal-00146136⟩

• Communication dans un congrès

Self-assembled molecular rectifying diodes

S. Lenfant, D. Vuillaume, Christophe Krzeminski, C. Delerue

Materials Research Society Spring Meeting, 2003, San Francisco, CA, United States. ⟨hal-00146173⟩

• Communication dans un congrès

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, Bernard Colombeau

European Materials Research Society Spring Meeting, 2003, Strasbourg, France. ⟨hal-00146423⟩

• Communication dans un congrès

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, Emmanuel Dubois, X. Wallart

European Materials Research Society Fall Meeting, 2003, Warsaw, Poland. ⟨hal-00146424⟩

• Communication dans un congrès

Polynomial method applied to acoustic waves in inhomogeneous cylinders

L. Elmaimouni, Jean-Etienne Lefebvre, Tadeusz Gryba, V. Zhang

2003, pp.1400-1403. ⟨hal-00145983⟩

• Communication dans un congrès

Impact of down scaling on high frequency noise performance of bulk and SOI MOSFETs

Gilles Dambrine, C. Raynaud, M. Vanmackelberg, Francois Danneville, G. Pailloncy, Sylvie Lepilliet, J.P. Raskin

SPIE Fluctuations and Noise Symposium, Noise in Devices and Circuits, 2003, Sante Fe, NM, United States. ⟨hal-00146001⟩

• Article dans une revue

What are the limiting parameters of deep-submicron MOSFETs for high frequency applications ?

Gilles Dambrine, C. Raynaud, D. Lederer, M. Dehan, O. Rozeaux, M. Vanmackelberg, Francois Danneville, Sylvie Lepilliet, J.P. Raskin

IEEE Electron Device Letters, 2003, 24, pp.189-191. ⟨hal-00145984⟩

• Communication dans un congrès

Self-consistent tight-binding electronic structure of GaN/AlN pyramidal quantum dots

Vivek Ranjan, Christophe Delerue, Guy Allan, Catherine Priester

We have employed a second nearest neighbour sp3 tight-binding scheme to study a pyramidal quantum dot of wurtzite GaN embedded in AlN. The largest QD, we have studied, consists of approximately forty thousand atoms. This corresponds to the actual size reported in the experiments. We have computed…

American Physical Society March Meeting, 2003, Austin, TX, United States. ⟨hal-00146640⟩