Publications

Affichage de 14451 à 14460 sur 16090


  • Communication dans un congrès

Reliability of GaN based devices

G. Meneghesso, Christophe Gaquière, E. Zanoni

Proceedings of the 2002 European Microwave Week, 2002, Milano, Italy. ⟨hal-00149728⟩

  • Article dans une revue

Characterization of mems devices using a polarisation interferometer

D. Jenkins, W. Clegg, X. Liu, E. Fribourg-Blanc, Eric Cattan

Integrated Ferroelectrics, 2002, 50, pp.91-99. ⟨hal-00149626⟩

  • Autre publication scientifique

Transport électronique dans l'ADN

T. Heim

2002. ⟨hal-00148694⟩

  • Communication dans un congrès

Performance of DS-CDMA on the 60 GHz channel

Laurent Clavier, M. Fryziel, Christelle Garnier, Yves Delignon, David Boulinguez

The goal of the paper is to show that a Gaussian approximation can be used to model the global noise in a DS-CDMA system on a 60 GHz frequency band. We show that this approximation can also include the noise due to multipath and to imperfections in power control. The model can then be used as a…

The 13th IEEE International Symposium on Personal, Indoor and Mobile Radio Communications, Sep 2002, Lisbon, Portugal. pp.2332-2336, ⟨10.1109/PIMRC.2002.1046561⟩. ⟨hal-00148328⟩

  • Communication dans un congrès

Focusing effects for electromagnetic bandgaps : the negative permittivity approach

Didier Lippens, Tahsin Akalin, Olivier Vanbésien, Jérôme Danglot, Jorge Carbonell

Actes des 7èmes Journées Caractérisation Microondes et Matériaux, JCMM 2002, 2002, Toulouse, France. ⟨hal-00148624⟩

  • Communication dans un congrès

High performance HBV multipliers monolithically integrated into a host quartz substrate

T. David, S. Arscott, J.M. Munier, Thibaut Decoopman, Tahsin Akalin, Patrick Mounaix, Xavier Mélique, Olivier Vanbésien, Gérard Beaudin, Didier Lippens

Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial lift-off and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz corresponding…

IEEE Tenth International Conference on Terahertz Electronics, Sep 2002, Cambridge, United Kingdom. pp.113-116, ⟨10.1109/THZ.2002.1037604⟩. ⟨hal-00148639⟩

  • Communication dans un congrès

Influence of the hole injection layer in thienylene phenylene light emitting diodes

K. Lmimouni, M. Berliocchi, C. Dufour, D. Vuillaume, F. Tran Van, J. Grazulevicius, C. Chevrot, J.P. Lere-Porte, S. Wakim

INF Meeting, 2002, Bari, Italy. ⟨hal-00148713⟩

  • Autre publication scientifique

Dispositifs intégrés pour la transposition de fréquences dans la bande térahertz

Thibaut David

2002. ⟨hal-00148632⟩

  • Communication dans un congrès

Room temperature passivation of the silicon surface by chemisorption of an organic monolayer

S. Kar, D. Vuillaume

202nd ElectroChemical Society Meeting, 2002, Salt Lake City, UT, United States. ⟨hal-00148726⟩