Publications

Affichage de 14471 à 14480 sur 16064


  • Communication dans un congrès

Versatile macromodel for the power supply of submicronic CMOS microprocessors based on voltage down DC-DC converter

Edith Kussener, Herve Barthelemy, A. Malherbe, A. Kaiser

2002, pp.V821-V824. ⟨hal-00148742⟩

  • Communication dans un congrès

On the physical interest of some numerical methods for wave phase conjugation in active media

A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

2002, pp.208. ⟨hal-00148692⟩

  • Article dans une revue

Development of a new ultrasonic technique for bone and biomaterials in vitro caracterization

Fabrice Lefebvre, Y. Deblock, Pierre Campistron, D.D. Ahite, Jean-Jacques Fabre

Journal of Biomedical Materials Research, 2002, 63, pp.441-446. ⟨hal-00149908⟩

  • Communication dans un congrès

Inspection de billes par spectroscopie de résonance des ondes ultrasonores de surface

S. Petit, J. Gualandri, H. Carrerot, C. Bruneel

2002, pp.360-363. ⟨hal-00149922⟩

  • Communication dans un congrès

Plastic relaxation mechanisms in systems with a twist-bonded layer

C. Priester, G. Grenet

2002, pp.I13.4. ⟨hal-00149952⟩

  • Communication dans un congrès

Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz

M. Ardouin, B. Bonte, M. Zaknoune, D. Theron, Y. Cordier, S. Bollaert, Jean-Claude de Jaeger

2002, pp.165-168. ⟨hal-00149697⟩

  • Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high…

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩

  • Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩