Publications
Affichage de 14471 à 14480 sur 16064
Versatile macromodel for the power supply of submicronic CMOS microprocessors based on voltage down DC-DC converter
Edith Kussener, Herve Barthelemy, A. Malherbe, A. Kaiser
2002, pp.V821-V824. ⟨hal-00148742⟩
Monte Carlo simulation of electron transport in narrow gap heterostructures
Jean-Luc Thobel, Olivier Bonno, François Dessenne, Hervé Boutry
Journal of Applied Physics, 2002, 92 (9), pp.5286-5295. ⟨10.1063/1.1511820⟩. ⟨hal-00148646⟩
On the physical interest of some numerical methods for wave phase conjugation in active media
A. Merlen, Vladimir Preobrazhensky, Philippe Pernod
2002, pp.208. ⟨hal-00148692⟩
Development of a new ultrasonic technique for bone and biomaterials in vitro caracterization
Fabrice Lefebvre, Y. Deblock, Pierre Campistron, D.D. Ahite, Jean-Jacques Fabre
Journal of Biomedical Materials Research, 2002, 63, pp.441-446. ⟨hal-00149908⟩
Inspection de billes par spectroscopie de résonance des ondes ultrasonores de surface
S. Petit, J. Gualandri, H. Carrerot, C. Bruneel
2002, pp.360-363. ⟨hal-00149922⟩
Inversion of V(z) responses for determination Cij elastic constants by using an optimization method on the singularities of the reflection coefficient
Youssef Benmehrez, Michael Lematre, G. Bourse, Wei-Jiang Xu, Mohamed Ourak
QUANTITATIVE NONDESTRUCTIVE EVALUATION, Jul 2001, Brunswick, United States. pp.1353-1360, ⟨10.1063/1.1472952⟩. ⟨hal-00149914⟩
Plastic relaxation mechanisms in systems with a twist-bonded layer
C. Priester, G. Grenet
2002, pp.I13.4. ⟨hal-00149952⟩
Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz
M. Ardouin, B. Bonte, M. Zaknoune, D. Theron, Y. Cordier, S. Bollaert, Jean-Claude de Jaeger
2002, pp.165-168. ⟨hal-00149697⟩
High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz
Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger
IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩
High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz
N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs
2002, 4 pp. ⟨hal-00149700⟩