Publications

• Communication dans un congrès

Plastic relaxation mechanisms in systems with a twist-bonded layer

C. Priester, G. Grenet

2002, pp.I13.4. ⟨hal-00149952⟩

• Communication dans un congrès

Inversion of V(z) responses for determination Cij elastic constants by using an optimization method on the singularities of the reflection coefficient

Youssef Benmehrez, Michael Lematre, G. Bourse, Wei-Jiang Xu, Mohamed Ourak

The measurement of the V(z) curve, also called acoustical material signature has been used to determine cij elastic constants. The method is based on the comparison of measured and calculated R(θ,f) reflection coefficient. The measured R(θ,f) is determined by inversion of the V(z) curve. The cij…

QUANTITATIVE NONDESTRUCTIVE EVALUATION, Jul 2001, Brunswick, United States. pp.1353-1360, ⟨10.1063/1.1472952⟩. ⟨hal-00149914⟩

• Communication dans un congrès

Inspection de billes par spectroscopie de résonance des ondes ultrasonores de surface

S. Petit, J. Gualandri, H. Carrerot, C. Bruneel

2002, pp.360-363. ⟨hal-00149922⟩

• Communication dans un congrès

Analyse physique des HEMTs à base de nitrure de gallium

M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger

GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149718⟩

• Communication dans un congrès

Spectroscopie STM de semiconducteurs et de molécules organiques

D. Stievenard

Ecole Thématique de Porquerolles, 2002, Porquerolles, France. ⟨hal-00149688⟩

• Communication dans un congrès

Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz

M. Ardouin, B. Bonte, M. Zaknoune, D. Theron, Y. Cordier, S. Bollaert, Jean-Claude de Jaeger

2002, pp.165-168. ⟨hal-00149697⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high…

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩

• Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

• Communication dans un congrès

32-QAM radio transmission over multimode fibre beyond the fiber bandwidth

D. Wake, Samuel Dupont, Jean-Pierre Vilcot, A.J. Seeds

2002, 4 pp. ⟨hal-00149639⟩

• Article dans une revue

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murtagh, J.C. Greer, M. Barbe, F. Bailly, Jacques Chevallier, S. Silvestre, D. Loridant-Bernard, E. Constant, M. Constant

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨hal-00149640⟩