Publications

Affichage de 14611 à 14620 sur 16309


  • Communication dans un congrès

Metamaterial based transmission lines in fineline technology

T. Decoopman, O. Vanbésien, D. Lippens

Proceedings of the 2003 International Student Seminar on Microwave Applications of Novel Physical Phenomena, 2003, Espoo, Finland. ⟨hal-00146101⟩

  • Communication dans un congrès

Monte Carlo simulation of electron transport in quantum cascade lasers

Olivier Bonno, Jean-Luc Thobel, François Dessenne

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146104⟩

  • Communication dans un congrès

A novel approach using picosecond ultrasonics at variable laser-wavelength for the characterization of AlN films used for microsystem applications

Arnaud Devos, G. Caruyer, C. Zinck, P. Ancey

2003, pp.793-796. ⟨hal-00144891⟩

  • Communication dans un congrès

On the response of a limited chain of welded spherical beads

Anne-Christine Hladky, Arnaud Devos, M. de Billy

2003, pp.1205-1208. ⟨hal-00144888⟩

  • Article dans une revue

Very low Schottky barrier to n-type silicon with PtEr-stack silicide

Xing Tang, J. Katcki, Emmanuel Dubois, N. Reckinger, J. Ratajczak, G. Larrieu, P. Loumaye, O. Nisole, V. Bayot

We investigate Er silicide formed on n-type silicon. In order to protect the Er from oxidation during the formation of Er silicide in non-UHV conditions, a Pt layer is deposed successively on top of Er layer. Surprisingly, we observe that Pt remains essentially unaffected in the formation of Er…

Solid-State Electronics, 2003, 47 (11), pp.2105-2111. ⟨10.1016/S0038-1101(03)00256-9⟩. ⟨hal-00146401⟩

  • Communication dans un congrès

New all 2-inch manufacturable high performance evanescent coupled waveguide photodiodes with etched mirrors for 40Gb/s optical receivers

Mohand Achouche, Stéphane Demiguel, Estelle Derouin, David Carpentier, F. Barthe, Fabrice Blache, Vincent Magnin, Joseph Harari, Didier Decoster

Evanescent PIN photodiodes are fabricated using all 2”-InP processing including on-wafer mirrors and coatings. 0.73 A/W responsivity at 1.55 µm, -1 dB vertical coupling tolerance of 2.2 µm and 47 GHz bandwidth are simultaneously demonstrated.

OFC 2003 Optical Fiber Communications Conference, Mar 2003, Atlanta, United States. pp.341-342, ⟨10.1109/OFC.2003.1248117⟩. ⟨hal-00146497⟩