Publications

• Article dans une revue

A highly directive dipole antenna embedded in a Fabry-Perot type cavity

Tahsin Akalin, Jérôme Danglot, Olivier Vanbésien, Didier Lippens

We investigate the origin of the directivity of a dipole antenna embedded in a dielectric slab Fabry-Perot cavity. It is shown that the focusing effect is due to the angular selection rules in the Bragg-type mirror and is directly correlated to the frequency selectivity of the cavity. For a 6 GHz…

IEEE Microwave and Wireless Components Letters, 2002, 12 (2), pp.48-50. ⟨10.1109/7260.982873⟩. ⟨hal-00148630⟩

• Article dans une revue

0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar

New In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 μm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic…

IEEE Electron Device Letters, 2002, 23 (2), pp.73-75. ⟨10.1109/55.981310⟩. ⟨hal-00147840⟩

• Article dans une revue

Theory of acoustic scattering by supported ridges at a solid-liquid interface

Jerome O. Vasseur, A. Khelif, J. Vasseur, Ph. Lambin, Bahram Djafari-Rouhani, P. Deymier

Physical Review E , 2002, 65 (3), ⟨10.1103/PhysRevE.65.036601⟩. ⟨hal-03302025⟩

• Chapitre d'ouvrage

Micro-actionneurs en alliages à mémoire de forme

N. Chaillet, L. Buchaillot, J. Abadie, I. Roch, C. Lexcellent

CUGAT O. Micro-actionneurs électroactifs, Hermès Sciences, pp.179-223, 2002. ⟨hal-00132049⟩

• Article dans une revue

Magnonic spectral gaps and discrete transmission in serial loop structures

A Mir, H Al Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski, Jerome O. Vasseur

Journal of Physics: Condensed Matter, 2002, 14 (3), pp.637-655. ⟨10.1088/0953-8984/14/3/331⟩. ⟨hal-03302129⟩

• Article dans une revue

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot

Applied Physics Letters, 2002, 80, pp.4151. ⟨hal-00018489⟩

• Article dans une revue

Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?

Xavier Wallart, Catherine Priester, D. Deresmes, Thomas Gehin, Francis Mollot

Applied Physics Letters, 2002, 81, pp.1060-1062. ⟨hal-00018491⟩

• Article dans une revue

Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector

S.L. Bravina, Eric Cattan, N.V. Morozovsky, Denis Remiens

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2002, 5, pp.89-94. ⟨hal-00250394⟩

• Autre publication scientifique

Conception et réalisation d'un amplificateur faible bruit à 2,4 GHz en technologie CMOS fortement submicronique

E. Fall

2002. ⟨hal-00162704⟩

• Communication dans un congrès

Controlled charge injection in semiconductor nanoparticles

Thierry Melin, D. Deresmes, D. Stievenard

Proceedings of the 2002 Materials Research Society Fall Meeting, 2002, Boston, MA, United States. ⟨hal-00149956⟩