Publications

• Article dans une revue

Supercritical parametric wave phase conjugation as an instrument for narrowband analysis in ultrasonic harmonic imaging

Leonid Krutyansky, Philippe Pernod, Andrey Brysev, Fedor V. Bunkin, Vladimir Preobrazhensky

Supercritical parametric wave phase conjugation (SWPC) is used for selection and phase conjugation of harmonic components of a nonlinear incident wave. Amplitude of the phase conjugate wave in a supercritical mode is high enough for acoustic nonlinearity of propagation medium to appear. As a result…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2002, 49 (4), pp.409-414. ⟨10.1109/58.996558⟩. ⟨hal-00148687⟩

• Autre publication scientifique

Filtres microélectroniques micro-usinés en poly-silicium couche épaisse et leur application au filtrage en fréquence intermédiaire

D. Galayko

2002. ⟨hal-00148722⟩

• Article dans une revue

Influence of the step covering on fatigue phenomenon for polycrystalline silicon micro-electro-mechanical-systems (MEMS)

O. Millet, Bernard Legrand, D. Collard, L. Buchaillot

Japanese Journal of Applied Physics, part 2 : Letters, 2002, 41, pp.L1339-L1341. ⟨hal-00250391⟩

• Article dans une revue

S. Carnot’s Réflexions: a theory based on non–classical Logic

Antonino Drago, Raffaele Pisano

Bulletin of Symbolic Logic, 2002, 8 (131), pp.131-132. ⟨hal-04508058⟩

• Autre publication scientifique

Conception et réalisation d'un séparateur acousto-optique de polarisation

A. Sakkour

2002. ⟨hal-00162705⟩

• Article dans une revue

From nanoelectronics to nanotechnology

Emmanuel Dubois

Belgian Journal of Electronics & Communications HF, 2002, 3, pp.9-16. ⟨hal-00250387⟩

• Communication dans un congrès

On the physical interest of some numerical methods for wave phase conjugation in active media

A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

2002, pp.208. ⟨hal-00148692⟩

• Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

• Communication dans un congrès

Analyse physique des HEMTs à base de nitrure de gallium

M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger

GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149718⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high…

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩