Publications

• Article dans une revue

Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement

Mustafa Boudrissa, Elisabet Delos, Christophe Gaquière, Michel Rousseau, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger

This paper exhibits experimental and theoretical results on metamorphic high-electron mobility transistor (MM-HEMT). Modeling and measurements provide a better knowledge of device physics which allows us to optimize device structures. We present 10-GHz power performances, pulse and gate…

IEEE Transactions on Electron Devices, 2001, 48 (6), pp.1037-1044. ⟨10.1109/16.925223⟩. ⟨hal-00152595⟩

• Article dans une revue

Giant magnonic band gaps and defect modes in serial stub structures: application to the tunneling between two wires

Abdellatif Akjouj, A. Mir, B. Djafari-Rouhani, J.O. Vasseur, Leonard Dobrzynski, H. Al-Wahsh, P.A. Deymier

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 482-485, pp.1062-1067. ⟨10.1016/S0039-6028(01)00861-5⟩. ⟨hal-04070322⟩

• Communication dans un congrès

FDTD modeling on high performance vector/parallel computers. Application to the analysis of millimeter wave printed antennas and focusing devices

Ronan Sauleau, Christophe Guiffaut, Philippe Coquet, Kouroch Mahdjoubi, J.P. Daniel

8th International Conference on Advances in Communications and Control, COMCON8, Telecommunications/Signal Processing, Jun 2001, Greece. 329-347 - 19 p. ⟨hal-00557676⟩

• Article dans une revue

Tight binding description of the electronic response of a molecular device to an applied voltage

Christophe Krzeminski, Christophe Delerue, Guy Allan

We analyze the effect of an external electric field on the electronic structure of molecules which have been recently studied as molecular wires or diodes. We use a self-consistent tight binding technique which provides results in good agreement with ab initio calculations and which may be applied…

Journal of Physical Chemistry B, 2001, 105 (27), pp.6321. ⟨10.1021/jp011263y⟩. ⟨hal-00604398⟩

• Article dans une revue

PBG-type microstrip filters with one and two-side patterns

Tahsin Akalin, Miguel A. G. Laso, Txema Lopetegi, Olivier Vanbésien, Mario Sorolla, Didier Lippens

We report first on an experimental analysis of photonic bandgap microstrip-type filters at microwave frequencies. The frequency-selective structure is achieved via ground-plane patterning. The influence of a shielding is addressed in particular. Then, we theoretically analyze the possibility of two…

Microwave and Optical Technology Letters, 2001, 30 (1), pp.69-72. ⟨10.1002/mop.1223⟩. ⟨hal-00152067⟩

• Communication dans un congrès

Nonlinear noise modeling of a PHEMT device through residual phase noise and low frequency noise measurements

Olivier Llopis, J B Juraver, B. Tamen, Francois Danneville, M. Chaubet, A. Cappy, Jacques Graffeuil

The phase noise generated by a FET device is investigated using transmission and reflection residual phase noise measurements. This approach helps in locating, in the intrinsic device, the low frequency noise sources which are responsible for these phase fluctuations. On the basis of these…

IEEE International Microwave Symposium, May 2001, Phoenix, United States. pp.831-834. ⟨hal-02335357⟩

• Article dans une revue

Stopping of acoustic waves by sonic polymer-fluid composites

Jerome O. Vasseur, Ph. Lambin, A. Khelif, L. Dobrzynski, Bahram Djafari-Rouhani

Physical Review E , 2001, 63 (6), ⟨10.1103/PhysRevE.63.066605⟩. ⟨hal-03302016⟩

• Article dans une revue

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

J Harris, K Lee, T. Wang, S. Sakai, Z. Bougrioua, Ingrid Moerman, E Thrush, J Webb, Hao Tang, T Martin, Duncan Kennedy Maude, J-C Portal

Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, τq,…

Semiconductor Science and Technology, 2001, 16 (5), pp.402-405. ⟨10.1088/0268-1242/16/5/321⟩. ⟨hal-02906503⟩

• Article dans une revue

Electrical effects of SiNx deposition on GaN MESFETs

B. Boudart, Christophe Gaquière, Y. Guhel, Jean-Claude de Jaeger, M.A. Poisson

The electrical effects of SiNx deposition on GaN MESFETs have been investigated. Significant effects induced from the dielectric coating have been observed depending on the temperature deposition used in the technological process. A power density increase of 30% has been observed after the device…

Electronics Letters, 2001, 37 (8), pp.527 - 528. ⟨10.1049/el:20010324⟩. ⟨hal-02936046⟩

• Article dans une revue

Experimental and Theoretical Evidence for the Existence of Absolute Acoustic Band Gaps in Two-Dimensional Solid Phononic Crystals

Jerome O. Vasseur, J. Vasseur, P. Deymier, B. Chenni, Bahram Djafari-Rouhani, L. Dobrzynski, D. Prevost

Physical Review Letters, 2001, 86 (14), pp.3012-3015. ⟨10.1103/PhysRevLett.86.3012⟩. ⟨hal-03302013⟩