Publications

• Article dans une revue

Fabrication of a pMUT using silicon bulk micromachining and a sputtered PZT layer

W. Daniau, Karim Dogheche, S. Ballandras, Eric Cattan, Denis Remiens, W. Steichen, P. Blind

Proc. of the 2nd WorkShop on MUT, Besançon, 2002, pp. june. ⟨hal-00123195⟩

• Communication dans un congrès

Solid-state 8 GHz transient signal digitizer characterization

A. Ghis, P. Ouvrier-Buffet, N. Rolland, A. Benlarbi-Delai, P.A. Rolland, D. Glay, D. Jaeger

2002, pp.1673-1676. ⟨hal-00148329⟩

• Article dans une revue

Fast electromagnetic characterization method of film-shaped materials using coplanar up to V-band

J. Hinojosa, K. Lmimouni, Gilles Dambrine

Electronics Letters, 2002, 38, pp.373-374. ⟨hal-00147838⟩

• Article dans une revue

Measurement of the elastic and viscoelastic properties of dielectric films used in microelectronics

G. Carlotti, P. Colpani, D. Piccolo, S. Santucci, V. Senez, G. Socino, L. Verdini

Thin Solid Films, 2002, 414, pp.99-104. ⟨hal-00148744⟩

• Article dans une revue

Vacuum and cryogenic station for Micro-Electro-Mechanical Systems probing and testing

Bernard Legrand, E. Quévy, B. Stefanelli, D. Collard, L. Buchaillot

Review of Scientific Instruments, 2002, 73, pp.4393-4395. ⟨hal-00148782⟩

• Communication dans un congrès

Charge transport in some molecular devices : self-assembled molecular rectifiers and DNA molecules

D. Vuillaume

6th Conference on Molecular-Scale Electronics, 2002, Key West, FL, United States. ⟨hal-00148708⟩

• Communication dans un congrès

Reliability of packaging MEMS in shock environment : crack and stiction modeling

O. Millet, D. Collard, L. Buchaillot

2002, pp.696-703. ⟨hal-00148789⟩

• Article dans une revue

Design production and testing of PMN-PT electrostrictive transducers

J. Coutte, Bertrand Dubus, J.C. Debus, C. Granger, D. Jones

Ultrasonics, 2002, 40, pp.883-888. ⟨hal-00147756⟩

• Article dans une revue

Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K

Mohamed Boutchich, Katir Ziouche, Pascale Godts, Didier Leclercq

In this paper, thermal properties of phosphorus and boron-doped low pressure chemical vapor deposition (LPCVD) polysilicon layers with regard to sensor applications are presented. Thermoelectric coefficient and relative resistance variations of polysilicon are investigated within the temperature…

IEEE Electron Device Letters, 2002, 23 (3), pp.139-141. ⟨10.1109/55.988817⟩. ⟨hal-00148729⟩

• Autre publication scientifique

Microcapteurs de rayonnement infrarouge en technologie silicium

Mohamed Boutchich

2002. ⟨hal-00148731⟩