Publications
Affichage de 14901 à 14910 sur 16459
Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs
Y. Guhel, B. Boudart, Virginie Hoel, M. Werquin, Christophe Gaquière, Jean-Claude de Jaeger, M.A. Poisson, I. Daumiller, E. Kohn
Microwave and Optical Technology Letters, 2002, 34, pp.4-6. ⟨hal-00149695⟩
Very high broadband electromagnetic characterization method of film-shaped materials using coplanar
J. Hinojosa, K. Lmimouni, Sylvie Lepilliet, Gilles Dambrine
Microwave and Optical Technology Letters, 2002, 33, pp.352-355. ⟨hal-00147839⟩
S. Carnot’s Réflexions: a theory based on non–classical Logic
Antonino Drago, Raffaele Pisano
Bulletin of Symbolic Logic, 2002, 8 (131), pp.131-132. ⟨hal-04508058⟩
Outils théoriques pour la structure électronique
Christophe Delerue, Guy Allan, Michel Lannoo, Christophe Krzeminski, Yann-Michel Niquet
Ecole thématique sur les nitrures, 2002, La Plagne, France. ⟨hal-00149679⟩
Ferroelectric (116) SrBi2Nb2O9 thin films epitaxially grown by pulsed laser deposition on epitaxial (110) Pt/(110) SrTiO3 electrode
Jean-René Duclere, Maryline Guilloux-Viry, A. Perrin, Eric Cattan, Caroline Soyer, Denis Remiens
Applied Physics Letters, 2002, 81 (11), pp.2067-2069. ⟨10.1063/1.1504179⟩. ⟨hal-00149629⟩
Conception et réalisation d'un séparateur acousto-optique de polarisation
A. Sakkour
2002. ⟨hal-00162705⟩
From nanoelectronics to nanotechnology
Emmanuel Dubois
Belgian Journal of Electronics & Communications HF, 2002, 3, pp.9-16. ⟨hal-00250387⟩
On the physical interest of some numerical methods for wave phase conjugation in active media
A. Merlen, Vladimir Preobrazhensky, Philippe Pernod
2002, pp.208. ⟨hal-00148692⟩
High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz
N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs
2002, 4 pp. ⟨hal-00149700⟩
Analyse physique des HEMTs à base de nitrure de gallium
M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger
GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149718⟩