Publications

Affichage de 14971 à 14980 sur 16448


  • Communication dans un congrès

Behaviour analysis of heterojunction acoustic charge transport devices

Tadeusz Gryba, F. Ratolojanahary, V. Zhang, Jean-Etienne Lefebvre

Proceedings of the 2002 Intern. Conf. on modern directions of develop. in electr. engin. auto comp., 2002, Cracovie, Poland. ⟨hal-00147826⟩

  • Communication dans un congrès

HEMT's design for applications beyond 100GHz

S. Bollaert, T. Parenty, X. Wallart, H. Happy, Gilles Dambrine, A. Cappy

2002, pp.45-48. ⟨hal-00147832⟩

  • Communication dans un congrès

Modeling of planar annular applicators for microwave thermotherapy

Julien Carlier, V. Thomy, J.C. Camart, Luc Dubois, J. Pribetich

2002 IEEE MTT-S International Microwave Symposium Digest, 2002, Seattle, WA, United States. pp.1771-1774. ⟨hal-00147874⟩

  • Article dans une revue

Modeling of planar applicators for microwave thermotherapy

Julien Carlier, V. Thomy, J.C. Camart, Luc Dubois, J. Pribetich

IEEE Transactions on Microwave Theory and Techniques, 2002, 50, pp.3036-3042. ⟨hal-00147859⟩

  • Article dans une revue

Surface impedance matrix for the study of acoustical propagation in multilayered structures

V. Zhang, Tadeusz Gryba, J.M. Orellana, B. Collet

Acta Acustica united with Acustica, 2002, 88, pp.218-230. ⟨hal-00147806⟩

  • Communication dans un congrès

Head mounted aid system for patients with AMD

Michel Pommeray, Jean-Claude Kastelik

2002, pp.1688-1689. ⟨hal-00147812⟩

  • Article dans une revue

Double acousto-optic interaction in paratellurite

A. Sakkour, Jean-Claude Kastelik, Michel Pommeray

Journal of Optics A: Pure and Applied Optics, 2002, 4, pp.315-319. ⟨hal-00147810⟩

  • Article dans une revue

Photo-induced dissociation and optical cross section of Si-H and S-H complexes in GaAs and AlGaAs

M. Barbe, F. Bailly, Jérome Chevalier, S. Silvestre, D. Loridant-Bernard, L. Kurowski, E. Constant, M. Constant

Materials Research Society Symposia Proceedings, 2002, 719, pp.289-294. ⟨hal-00278933⟩

  • Communication dans un congrès

Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In0.53Ga0.47As heterojunction bipolar transistor

E. Lefebvre, M. Zaknoune, F. Mollot

14th Indium Phosphide and Related Materials Conference, IPRM 2002, 2002, Sweden. pp.615-618. ⟨hal-00250210⟩