Publications

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction…

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩

• Article dans une revue

Microwave technique for detection, location and sizing of buried objects

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

The detection, location, and sizing of immersed objects in a host medium are tasks of interest in many fields. One of the most suitable tools for the noninvasive measurements of buried objects is the use of microwaves. We propose in this paper a microwave method based on the knowledge of the…

Microwave and Optical Technology Letters, 2002, 32 (2), pp.145-149. ⟨10.1002/mop.10115⟩. ⟨hal-00147852⟩

• Article dans une revue

Photodissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murthag, J.C. Greer, M. Barbe, F. Bailly, Jérome Chevalier, S. Sylvestre, D. Loridant-Bernard, E. Constant, M. Constant

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-…

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨10.1016/S0168-583X(01)00949-1⟩. ⟨hal-00278930⟩

• Article dans une revue

Fabrication of a pMUT using silicon bulk micromachining and a sputtered PZT layer

W. Daniau, Karim Dogheche, S. Ballandras, Eric Cattan, Denis Remiens, W. Steichen, P. Blind

Proc. of the 2nd WorkShop on MUT, Besançon, 2002, pp. june. ⟨hal-00123195⟩

• Chapitre d'ouvrage

Chapitre 5 : Micro-actionneurs en alliage à mémoire de forme

Nicolas Chaillet, L. Buchaillot, Joël Abadie, I. Roch, Christian Lexcellent

Microactionneurs électromagnétiques, électrostatiques et électroactifs, HERMES Science Publications, pp. 179-219, 2002, Collection EGEM (Electronique, Génie Electrique, Micro-technologies). ⟨hal-00092477⟩

• Autre publication scientifique

Détection électronique d'une interaction biomoléculaire entre des électrodes nanostructurées

V. Haguet

2002. ⟨hal-00149657⟩

• Article dans une revue

Influence of annealing treatments on the physical properties of c-BN films synthesized by IBAD technique

M. A. Djouadi, A. Soltani, P. Thévenin, A. Bath, G. Nouet

Advanced Engineering Materials, 2002, 4, pp.616-619. ⟨hal-00149702⟩

• Communication dans un congrès

Performance à 60 GHz de HEMTs métamorphiques sur GaAs utilisant une technologie à double recess

M. Zaknoune, M. Ardouin, B. Bonte, Y. Cordier, S. Bollaert, D. Theron, Jean-Claude de Jaeger

9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aigulf, France. ⟨hal-00149738⟩

• Autre publication scientifique

Du modèle de canal de propagation à l'optimisation des systèmes de télécommunications

M. Lienard

2002. ⟨hal-00577049⟩

• Communication dans un congrès

Multiple access for 60 GHz mobile ad hoc networks

Christelle Garnier, Laurent Clavier, Yves Delignon, Matthieu Loosvelt, David Boulinguez

This paper analyzes the suitability of various multiple access schemes for a 60 GHz mobile ad hoc network. The investigated techniques include multi-carrier modulation (OFDM-TDMA), the spectrum spreading method (DS-CDMA) and the combined schemes (MC-CDMA, MC-DS-CDMA) benefiting from the advantages…

IEEE 55th Vehicular Technology Conference. VTC Spring 2002, May 2002, Birmingham, AL, United States. pp.1517-1521, ⟨10.1109/VTC.2002.1002870⟩. ⟨hal-00148334⟩