Publications

Affichage de 15051 à 15060 sur 16309


  • Article dans une revue

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface

B. Grandidier, Jean-Philippe Nys, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, Pierre Frere, Phillippe Blanchard, Jean Roncali

The adsorption of thienylenevinylene oligomers on the Si(100) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene…

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 473 (1-2), pp.1-7. ⟨10.1016/S0039-6028(00)00946-8⟩. ⟨hal-00688535⟩

  • Article dans une revue

PbZr0.52Ti0.48O3 and SrBi2Nb2O9 ferroelectric oxides integrated with YBa2Cu3O7 superconductor in multilayers epitaxially grown by pulsed laser deposition

Jean-René Duclere, Maryline Guilloux-Viry, A. Perrin, Caroline Soyer, Eric Cattan, Denis Remiens, A. Dauscher, Sébastien J. Weber, B. Lenoir

Multilayers of PbZr0.52Ti0.48O3 (PZT) or SrBi2Nb2O9 (SBN) ferroelectrics (F) and YBa2Cu3O7 (YBaCuO) superconductor (S) have been grown by pulsed laser deposition. F/S or S/F bilayers as well as S/F/S trilayers deposited on SrTiO3 and MgO were epitaxially grown, as evidenced by x-ray diffraction (…

Journal de Physique IV Proceedings, 2001, International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures, 11 (PR11), pp.29-33. ⟨10.1051/jp4:20011104⟩. ⟨hal-00152480⟩

  • Chapitre d'ouvrage

High Performance Heterostructure Barrier Varactors

Didier Lippens, Xavier Mélique, S. Arscott, Thibaut David, V. Duez, Jorge Carbonell, Patrick Mounaix, Olivier Vanbésien, Francis Mollot

We report on the physics, fabrication technology and characterisation of high performance Heterostructure Barrier Varactors diodes. State-of-the art results in terms of capacitance ratios of up to 10:1 and voltage handling have recently been published for InP-and GaAs-based devices with a typical…

MILES R.E., HARRISON P., LIPPENS D. Terahertz Sources and Systems, Springer Netherlands, pp.53-67, 2001, 978-94-010-0824-2. ⟨10.1007/978-94-010-0824-2_4⟩. ⟨hal-02348008⟩

  • Chapitre d'ouvrage

HEMT's capability for millimeter-wave applications

S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, A. Cappy

NEY M. Millimeter waves in communication systems, Hermès, pp.15-26, 2001. ⟨hal-00132930⟩

  • Communication dans un congrès

Etude physique du phénomène de claquage dans les transistors à effet de champ à hétérojonctions

Michel Rousseau, M. Elkhou, Jean-Claude de Jaeger

Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. ⟨hal-00152652⟩

  • Communication dans un congrès

Détermination de caractéristiques I(V) en régime dynamique grand signal de transistors HEMTs AlGaN/GaN

N. Vellas, Christophe Gaquière, Y. Guhel, B. Boudart, E. Delos, Jean-Claude de Jaeger

Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. ⟨hal-00152654⟩

  • Article dans une revue

rf-sputtering of PMNT thin films

E. Fribourg-Blanc, Eric Cattan, Denis Remiens, M. Dupont, D. Osmont

Journal de Physique IV Proceedings, 2001, 11, pp.145-149. ⟨hal-00152482⟩

  • Article dans une revue

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface

B. Grandidier, J.P. Nys, D. Stievenard, Christophe Krzeminski, C. Delerue, P. Frere, P. Blanchard, J. Roncali

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 473, pp.1-7. ⟨hal-00152539⟩