Publications

• Communication dans un congrès

2-D unstructured numerical simulation for acoustic pulse scattering at water-immersed steel plate. Lamb and Scholte-Stonneley waves investigation

L. Derbesse, P. Voinovich, A. Merlen, Philippe Pernod

Proceedings of the 17th International Congress on Acoustics, ICA 2001, 2001, Roma, Italy. ⟨hal-00152121⟩

• Communication dans un congrès

Premiers résultats de MESFET's GaN réalisés sur substrat slicium (111)

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France. ⟨hal-00152908⟩

• Communication dans un congrès

Organic self-assembled monolayers and nano-field-effect transistors

D. Vuillaume

SPIE's 46th Annual Meeting, 2001, San Diego, CA, United States. ⟨hal-00152182⟩

• Communication dans un congrès

Transistors organiques : récents développements et résultats

D. Vuillaume

Journées du GDR Matériaux Moléculaires, 2001, Grenoble, France. ⟨hal-00152184⟩

• Communication dans un congrès

A 5 mW-290 GHz heterostructure barrier tripler in a waveguide configuration

T. David, M. Guillon, S. Arscott, Alain Maestrini, Tahsin Akalin, Benoît Lecomte, Jorge Carbonell, Michel Chaubet, Patrick Mounaix, Gérard Beaudin, Didier Lippens

An output power of 5 mW has been demonstrated at 290 GHz by tripling a primary signal in the W band. The nonlinear devices are high performance InP-based heterostructure barrier varactors mounted in mechanically tuned waveguide harmonic multiplier. The flange-to-flange maximum efficiency was 5%…

2001 IEEE MTT-S International Microwave Symposium Digest, May 2001, Phoenix, AZ, United States. pp.1661-1664, ⟨10.1109/MWSYM.2001.967224⟩. ⟨hal-02347990⟩

• Article dans une revue

Growth of strained Ga_1-xIn_xP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides

X. Wallart, D. Deresmes, F. Mollot

Using reflection high energy electron diffraction and atomic force microscopy, the growth of Ga1−xInxP alloys on GaP (0 0 1) with x varying from 0.2 to 1 (InP) is investigated and compared to that of arsenides on GaAs (0 0 1) or InP (0 0 1). At 520°C, the evolution of the critical thickness for 3D…

• Communication dans un congrès

Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, El Hadj Dogheche

4th International Conference on Nitride Semiconductors, 2001, United States. pp.537-541. ⟨hal-00250412⟩

• Article dans une revue

Influence of low-temperature buffer layers on the optical waveguiding properties of AlxGa1-xN alloys

El Hadj Dogheche, P. Ruterana, F. Omnes

Journal of Applied Physics, 2001, 90, pp.4411-4414. ⟨hal-00250414⟩

• Article dans une revue

Finite element modeling of lead magnesium niobate electrostrictive materials : dynamic analysis

J. Coutte, J.C. Debus, Bertrand Dubus, R. Bossut

Journal of the Acoustical Society of America, 2001, 109, pp.1403-1411. ⟨hal-00151686⟩

• Communication dans un congrès

Transistors et circuits AlInAs/InGaAs pour applications millimétriques et sub-millimétriques

S. Bollaert, A. Cappy

Atelier CNES, 2001, Toulouse, France. ⟨hal-00151773⟩