Publications

• Article dans une revue

Stiction-controlled locking system for three-dimensional self-assembled microstructures : theory and experimental validation

Vincent Agache, Emmanuel Quévy, Dominique Collard, Lionel Buchaillot

The premise of our study lies in the controlled use of the phenomenon of stiction to lock three-dimensional self-assembled polycrystalline silicon (polysilicon) microstructures. The stiction refers to the permanent adhesion of the microstructures to adjacent surfaces. It can occur either during the…

Applied Physics Letters, 2001, 79, pp.3869-3871. ⟨10.1063/1.1418031⟩. ⟨hal-00152459⟩

• Communication dans un congrès

Acoustical bistability in a nonlinear gematite resonator

Y. Fetisov, F. Merkelov, V. Moshkin, Vladimir Preobrazhensky, Y. Pil'Nov

2001, pp.72. ⟨hal-00152110⟩

• Communication dans un congrès

Power LDMOS design using an SOI RESURF architecture : on state / breakdown voltage trade-off

Emmanuel Dubois, K. Suzuki, E. Lampin

Franco-Swedish Workshop on SOI, 2001, Grenoble, France. ⟨hal-00152238⟩

• Article dans une revue

Theoretical analysis of the density of states and phase times: Application to resonant electromagnetic modes in finite superlattices

M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski, M. Hammouchi, E. El Boudouti, A. Nougaoui, B. Kharbouch

Physical Review B, 2001, 63 (3), pp.035312. ⟨10.1103/PhysRevB.63.035312⟩. ⟨hal-04069647⟩

• Communication dans un congrès

An efficient modelling of the impulse response of the indoor power line communication channels in high frequency range

Patrick Corlay, François-Xavier Coudoux, Marc G. Gazalet, F. Ruolt, F. Haine

2001, pp.149-154. ⟨hal-00152914⟩

• Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate…

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩

• Article dans une revue

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface

B. Grandidier, J.P. Nys, D. Stievenard, Christophe Krzeminski, C. Delerue, P. Frere, P. Blanchard, J. Roncali

The adsorption of thienylenevinylene oligomers on the Si(1 0 0) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene…

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 473, 1-2, pp.1-7. ⟨10.1016/S0039-6028(00)00946-8⟩. ⟨hal-00018576⟩

• Article dans une revue

Tight binding for complex semiconductor systems

Christophe Delerue, Michel Lannoo, Guy Allan

In this review, we illustrate multiple aspects of the application of the empirical tight binding (ETB) approximation. We begin by summarizing the general principles of ETB where the Hamiltonian matrix is written in a restricted atomic basis set and in terms of a relatively limited number of…

physica status solidi (b), 2001, 227, 1, pp.115-149. ⟨10.1002/1521-3951(200109)227:13.0.CO;2-2⟩. ⟨hal-00018572⟩

• Ouvrages

Special issue on advances and applications in microwave and millimeter wave nondestructive evaluation

T. Lasri, R. Zoughi

Kluwer Academic/Plenum Publishers, Subsurface Sensing Technologies and Applications, 2, 4, 343-473, 2001. ⟨hal-00577047⟩

• Communication dans un congrès

Etude par spectroscopie Raman de la décomplexation photoinduite du matériau GaAs hydrogéné

Arnaud Beaurain, A. Lorriaux-Rubbens, M. Constant, S. Silvestre, D. Loridant-Bernard

8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, Jan 2001, Aussois, France. ⟨hal-00152510⟩