Publications

• Article dans une revue

Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage

Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger

This paper presents original and experimental results provided by E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As metamorphic HEMT. The devices exhibit good dc and rf performances. The 0.4 μm gate length devices have saturation current density of 355 mA/mm at +0.6 V gate-to-source…

IEEE Electron Device Letters, 2000, 21 (11), pp.512-514. ⟨10.1109/55.877193⟩. ⟨hal-00158983⟩

• Communication dans un congrès

Microtechnologies for the monolithic fabrication of mm and submm non linear devices

P. Mounaix, S. Arscott, T. David, Florence Podevin, X. Melique, D. Lippens

30th European Microwave Conference, 2000, Oct 2000, Paris, France. pp.1-4, ⟨10.1109/EUMA.2000.338617⟩. ⟨hal-02348043⟩

• Article dans une revue

The preparation of flat H–Si(111) surfaces in 40% NH4F revisited

Philippe Allongue, Catherine Henry de Villeneuve, Sylvie Morin, Rabah Boukherroub, Danial D.M. Wayner

The reasons why ideally flat H–Si(111) surface can be prepared by NH4F etching are investigated from correlation between AFM observations and experimental conditions used for etching. It is shown that pitting may be completely suppressed if a one side polished wafer is immersed in an oxygen free…

Electrochimica Acta, 2000, 45 (28), pp.4591-4598. ⟨10.1016/S0013-4686(00)00610-1⟩. ⟨hal-04166347⟩

• Brevet

Détecteur infrarouge semi-conducteur et son procédé de fabrication

D. Stievenard, C. Delerue, Bernard Legrand

France, N° de brevet: FR2791474 (A1) 2000-09-29. 2000. ⟨hal-00372676⟩

• Communication dans un congrès

Sadi Carnot’s original thermodynamics as a logical theory

Raffaele Pisano

AILA – International Logical Mathematics Meetings, 25–28 September, AILA - Italian Association of Logics and Its Applications, Sep 2000, Ravello (Napoli), Italy. ⟨hal-04519734⟩

• Article dans une revue

Theoretical calculation of the acoustic force on a patterned silicon wafer during megasonic cleaning

Jerome O. Vasseur, P. Deymier, A. Khelif, Bahram Djafari-Rouhani, J. Vasseur, S. Raghavan

Journal of Applied Physics, 2000, 88 (5), pp.2423-2429. ⟨10.1063/1.1287224⟩. ⟨hal-03301906⟩

• Chapitre d'ouvrage

Low-voltage analog CMOS design

A. Kaiser

OLIVER J. Low power techniques and neural applications in microelectronics, Centre de Visio per Computador Editor, Barcelona, Spain, pp.101-115, 2000. ⟨hal-00132553⟩

• Article dans une revue

0,1-µm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

M. Zaknoune, Y. Cordier, S. Bollaert, D. Ferre, D. Theron, Y. Crosnier

High performance In0.32Al0.68As/In0.33Ga0.67As double heterojunction metamorphic high electron mobility transistors (DH-MMHEMT) have been grown by molecular beam epitaxy on GaAs substrates. An inverse step metamorphic buffer has been used to reach a relaxation rate close to 98% and a mean cross…

Solid-State Electronics, 2000, 44 (9), pp.1685-1688. ⟨10.1016/S0038-1101(00)00060-5⟩. ⟨hal-00158982⟩

• Communication dans un congrès

Gaussian Beam Antennas fed by a horn or a planar source

Ronan Sauleau, Philippe Coquet, T. Matsui, J.P. Daniel

International Symposium on Antennas and Propagation - ISAP'2000, Aug 2000, Fukuoka, Japan. 1019-1022 - 4 p. ⟨hal-00557685⟩

• Article dans une revue

Effects on linearity in Ka band of single or double recess PHEMTs

Christophe Gaquière, Frédéric Bue-Erkmen, Pascal Delemotte, Yves Crosnier, Bernard Carnez, D. Pons

The effects of the gate recess topologies on the linearity performance of PHEMT's have been investigated in the Ka band. The authors highlight the reasons why, at a given output power level, the double recessed device exhibits a very large improvement of its intermodulation performance as its…

IEEE Microwave and Guided Wave Letters, 2000, 10 (7), pp.267-269. ⟨10.1109/75.856984⟩. ⟨hal-00158980⟩