Publications
Affichage de 15251 à 15260 sur 16258
70nm gate InP-based HEMTs with high ft and fmax
T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy
11th European Heterostructure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00151776⟩
0.12 µm gate length InAlAs/InGaAs HEMTs on transferred substrate
S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, V. Aspar, J. Mateos-Lopez
2001, pp.171-174. ⟨hal-00151762⟩
Modélisation par éléments finis du comportement des alliages à mémoire de forme
S. Rafanomezantsoa
2001. ⟨hal-00151684⟩
SAW characteristics in a layered ZnO/GaAs structure for design of integrated SAW filters
V. Zhang, Fabrice Lefebvre, Tadeusz Gryba
2001, pp.261-264. ⟨hal-00151743⟩
Evidence of laser wavelength effect in picosecond ultrasonics : possible connection to interband transitions
Arnaud Devos, Catherine Lerouge
Physical Review Letters, 2001, 86, pp.2669-2672. ⟨hal-00151688⟩
AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments
D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul
MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩
Theoretical analysis of the density of states and phase times: Application to resonant electromagnetic modes in finite superlattices
M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski, M. Hammouchi, E. El Boudouti, A. Nougaoui, B. Kharbouch
Physical Review B, 2001, 63 (3), pp.035312. ⟨10.1103/PhysRevB.63.035312⟩. ⟨hal-04069647⟩