Publications
Affichage de 15371 à 15380 sur 16175
Electronic structure and rectification properties of a molecular diode
Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, Robert M Metzger
Asia-Pacific Surface and Interface Analysis Conference, APSIAC 2000, 2000, Beijing, China. ⟨hal-00158953⟩
In situ deposition of sputtered PZT films: control of the growth temperature by the sputtered lead flux
G. Velu, Denis Remiens
Vacuum, 2000, 56, pp.199-204. ⟨hal-00158556⟩
X-ray diffraction from perfect silicon crystals distorted by surface acoustic waves
R. Tucoulou, R. Pascal, M. Brunel, O. Mathon, D.V. Roshchupkin, I.A. Schelokov, Eric Cattan, Denis Remiens
Journal of Applied Crystallography, 2000, 33, pp.1019-1022. ⟨hal-00158555⟩
Design and simulation of a dual mode semiconductor laser using sampled grating DFB structure
M. Hussein-Mourad, Jean-Pierre Vilcot, Didier Decoster, D. Marcenac
IEE Proceedings. Optolectronics, 2000, 147, pp.37-42. ⟨hal-00158552⟩
Design and fabrication of a new optical switch for the synthesis of large time delays
Y. Hernandez, Jean-Pierre Vilcot, Joseph Harari, Didier Decoster, M. Schaller, J. Chazelas
2000, pp.X-15, X-16. ⟨hal-00158580⟩
Strong isotope effects in the UV light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs : Si
Jacques Chevallier, M. Barbe, M. Constant, D. Bernard-Loridant, S. Silvestre, E. Constant
Superlattices and Microstructures, 2000, 27, pp.447-452. ⟨hal-00158584⟩
Nano-domain formation in binary self-assembled monolayers of alkysiloxanes on silicon
Laurent Breuil, Dominique Vuillaume
GDR Films Moléculaires Bidimensionnels, 2000, Obernai, France. ⟨hal-00158474⟩
Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN
B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahreche, F. Omnes
Journal of Electronic Materials, 2000, 29, pp.603-606. ⟨hal-00158984⟩
Organic self-assembled monolayers on silicon : electronic properties and applications in nanoelectronics and molecular electronics devices
D. Vuillaume
Instituto di ellectronica dello stato solido, 2000, Roma, Italy. ⟨hal-00158486⟩