Publications

• Article dans une revue

Atomic force microscope tip-surface behaviour under continuous bias or pulsed voltages in non contact mode

Bernard Legrand, D. Stievenard

Applied Physics Letters, 2000, 76, pp.1018-1020. ⟨hal-00158646⟩

• Article dans une revue

Nature of impurity states in doped amorphous silicon

Guy Allan, Christophe Delerue, Michel Lannoo

We calculate the electronic structure of doped amorphous silicon in a tight-binding framework. Substitutional impurities are randomly introduced at fourfold-coordinated sites of a previously published model of a-Si:H. Our most important result is that single impurities have much larger binding…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.10206-10210. ⟨10.1103/PhysRevB.61.10206⟩. ⟨hal-00158663⟩

• Communication dans un congrès

Excitonic and quasiparticle gaps in Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to…

CECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158952⟩

• Article dans une revue

Quantum confinement in germanium nanocrystals

Yann-Michel Niquet, Guy Allan, Christophe Delerue, Michel Lannoo

The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters.…

Applied Physics Letters, 2000, 77, pp.1182-1184. ⟨10.1063/1.1289659⟩. ⟨hal-00158666⟩

• Article dans une revue

Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates

X. Wallart, F. Mollot

Applied Surface Science, 2000, 166, pp.446-450. ⟨hal-00158444⟩

• Communication dans un congrès

Organic semiconductors : application to light emitting diodes and thin film transistors

K. Lmimouni

Université de Rome Tor Vergata, 2000, Roma, Italy. ⟨hal-00158483⟩

• Communication dans un congrès

Very low-voltage fully differential amplifier for switched capacitor applications

M. Dessouky, A. Kaiser

2000, pp.441-444. ⟨hal-00158508⟩

• Communication dans un congrès

Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : comparison with the GaInAs/GaAs system

X. Wallart, D. Deresmes, F. Mollot

2000, pp.231-234. ⟨hal-00158442⟩

• Article dans une revue

Determination of the electrical properties of thermally grown ultrathin nitride films

N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, C. Chaneliere

Microelectronics Reliability, 2000, 40, pp.589-592. ⟨hal-00158478⟩

• Autre publication scientifique

Contribution à l'étude et à la réalisation d'une liaison mixte fibre radio bidirectionnelle haut débit intra-bâtiment à 60 GHz

Samuel Dupont

2000. ⟨hal-00158551⟩