Publications
Affichage de 15451 à 15460 sur 16105
First results of GaN MESFET's realized on (111) Si
Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159036⟩
Low field anisotropic magnetostriction of single domain exchange-coupled (TbFe/Fe) multilayers : static and dynamical properties
Henri Le Gall, Jamal Ben Youssef, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod
Joint MORIS-APDSC 2000, Magneto-Optical Recording International Symposium/Asia-Pacific Data Storage Conference, 2000, Nagoya, Japan. ⟨hal-00158475⟩
1 W/mm GaAs PHEMT for realization of linear power amplifier in the K band
X. Hue, E. Rogeaux, J.L. Cazaux, Alain Mallet, L. Lapierre, B. Boudart, B. Bonte, Y. Crosnier
2000, pp.228-231. ⟨hal-00158977⟩
Quantitative visualisation and numerical simulation of acoustic scattering phenomena in an elastic plate of linearly varying thickness
L. Derbesse, Philippe Pernod, P. Voinovich, A. Merlen
Proceedings of the 5th European Conference on Underwater Acoustics, ECUA 2000, 2000, Lyon, France. ⟨hal-00158467⟩
2D unstructured simulation of acoustic scattering phenomena
L. Derbesse, P. Voinovich, Philippe Pernod, A. Merlen
2000, pp.573-576. ⟨hal-00158463⟩
Non linear dynamics of magnetostrictive thin films near spin reorientation transition
Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Henri Le Gall, Jamal Ben Youssef
Proceedings of the 3rd European Conference on Magnetic Sensors & Actuators, EMSA 2000, Jul 2000, Dresden, Germany. ⟨hal-00158468⟩
Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence
S. Trassaert
2000. ⟨hal-00158975⟩
Formation de nano-domaines dans les mono-couches mixtes d'alkysilanes sur silicium
Laurent Breuil
2000. ⟨hal-00158471⟩
Transducer arrays from piezoelectric hollow sphere
S. Alkoy, R.J. Meyer, Anne-Christine Hladky, W.J. Hughes, J. Cochran, R.E. Newnham
2000, pp.737-740. ⟨hal-00157822⟩
Dependence of the carrier lifetime on acceptor concentration in GaAs grown at low-temperature under different growth and annealing conditions
M. Stellmacher, J. Nagle, Jean-Francois Lampin, P. Santoro, J. Vaneecloo, Antigoni Alexandrou
Journal of Applied Physics, 2000, 88, pp.6026-6031. ⟨hal-00158228⟩