Publications

• Communication dans un congrès

Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : comparison with the GaInAs/GaAs system

X. Wallart, D. Deresmes, F. Mollot

2000, pp.231-234. ⟨hal-00158442⟩

• Communication dans un congrès

Excitonic and quasiparticle gaps in Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to…

CECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158952⟩

• Communication dans un congrès

Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content

Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy

2000, pp.102-105. ⟨hal-00159005⟩

• Communication dans un congrès

AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT

M. Zaknoune, O. Schuler, X. Wallart, S. Piotrowicz, F. Mollot, D. Theron, Y. Crosnier

2000, pp.353-356. ⟨hal-00159004⟩

• Communication dans un congrès

STM studies of organic molecules on Si(100) : what can we learn ?

D. Stievenard

Research Conference on Manipulation of Individual Atoms and Molecules, 2000, Les Houches, France. ⟨hal-00158964⟩

• Autre publication scientifique

Conception, réalisation et caractérisation de transistors à effet de champ et d'amplificateurs pour des applications de puissance à haute linéarité en bandes K et Ka

X. Hue

2000. ⟨hal-00158969⟩

• Communication dans un congrès

Visualisation des ondes Ao, So, A1, S1 et A sur une plaque métallique immergée

L. Derbesse, Philippe Pernod, V. Latard, A. Merlen

2000, pp.92-94. ⟨hal-00158457⟩

• Article dans une revue

Determination of the electrical properties of thermally grown ultrathin nitride films

N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, C. Chaneliere

Microelectronics Reliability, 2000, 40, pp.589-592. ⟨hal-00158478⟩

• Article dans une revue

Spatial mapping of electroluminescence due to impact ionization effect in high electron mobility transistors

Christophe Gaquière, B. Boudart, P.A. Dhamlincourt

Applied Spectroscopy, 2000, 54, pp.1423-1428. ⟨hal-00158981⟩

• Communication dans un congrès

Microsystème : enjeux et perspectives

D. Collard, L. Buchaillot, Bernard Legrand

Journée IMAPS : International Microelectronics and Packaging Society, 2000, Lille, France. ⟨hal-00158539⟩