Publications

Affichage de 15561 à 15570 sur 16175


  • Article dans une revue

Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates

X. Wallart, F. Mollot

Applied Surface Science, 2000, 166, pp.446-450. ⟨hal-00158444⟩

  • Communication dans un congrès

STM studies of organic molecules on Si(100) : what can we learn ?

D. Stievenard

Research Conference on Manipulation of Individual Atoms and Molecules, 2000, Les Houches, France. ⟨hal-00158964⟩

  • Communication dans un congrès

Non linear magneto-acoustic excitations in rare-earth multilayer structures

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Henri Le Gall, Jamal Ben Youssef

The results presented in this paper clearly show the efficiency of nonlinear driving of a planar structure by means of magnetostrictive multilayers near the spin reorientation transition point. The nonlinear effects can be used for low frequency driving of various micromechanical and micro-opto-…

IEEE Ultrasonics Symposium. Proceedings. An International Symposium, Oct 2000, San Juan, PR, United States. pp.847-850, ⟨10.1109/ULTSYM.2000.922675⟩. ⟨hal-00158460⟩

  • Communication dans un congrès

Visualisation des ondes Ao, So, A1, S1 et A sur une plaque métallique immergée

L. Derbesse, Philippe Pernod, V. Latard, A. Merlen

2000, pp.92-94. ⟨hal-00158457⟩

  • Autre publication scientifique

Contribution à la conception et à la réalisation de liaisons radio haut débit intra-bâtiment à 60 GHz

Christophe Loyez

2000. ⟨hal-00157903⟩

  • Communication dans un congrès

Effects of substrate preparation on properties of YBaCuO thin films

A. Dégardin, X. Castel, M. Achani, Maryline Guilloux-Viry, E. Caristan, Yannick Roelens, J.C. Carru, A. Perrin, A. Kreisler

2000, pp.1993-1994. ⟨hal-00157906⟩

  • Communication dans un congrès

Organic semiconductors : application to light emitting diodes and thin film transistors

K. Lmimouni

Université de Rome Tor Vergata, 2000, Roma, Italy. ⟨hal-00158483⟩

  • Communication dans un congrès

AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT

M. Zaknoune, O. Schuler, X. Wallart, S. Piotrowicz, F. Mollot, D. Theron, Y. Crosnier

2000, pp.353-356. ⟨hal-00159004⟩