Publications

• Communication dans un congrès

Theoretical limits for signal reflections due to inductance for on-chip interconnections

Fabrice Huret, Erick Paleczny, P. Kennis, Denis Deschacht, Gregory Servel

2000, pp.55-60. ⟨hal-00158603⟩

• Article dans une revue

Excitonic and quasiparticle gaps on Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to…

Physical Review Letters, 2000, 84, pp.2457-2460. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158640⟩

• Communication dans un congrès

Transmission line analysis via THz photoconductive sampling

Jean-Francois Lampin, F. Mollot

International Terahertz Workshop, 2000, Sandbjerg, Denmark. ⟨hal-00158448⟩

• Communication dans un congrès

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface

B. Grandidier, J.P. Nys, D. Stievenard, Christophe Krzeminski, C. Delerue, P. Frere, P. Blanchard, J. Roncalli

Proceedings of the 47th International Symposium of the American Vacuum Society, AVS 2000, 2000, Boston, MA, United States. ⟨hal-00158959⟩

• Communication dans un congrès

1 W/mm GaAs PHEMT for realization of linear power amplifier in the K band

X. Hue, E. Rogeaux, J.L. Cazaux, Alain Mallet, L. Lapierre, B. Boudart, B. Bonte, Y. Crosnier

2000, pp.228-231. ⟨hal-00158977⟩

• Communication dans un congrès

Silicon nitride passivation on GaN MESFET's

Christophe Gaquière, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, Jean-Claude de Jaeger, F. Omnes

2000, pp.VIII-11, VIII-12. ⟨hal-00159001⟩

• Communication dans un congrès

Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate

N. Cavassilas, F. Aniel, A. Nojeh, R. Adde, M. Zaknoune, S. Bollaert, Y. Cordier, D. Theron, A. Cappy

2000, 10 pp. ⟨hal-00159003⟩

• Autre publication scientifique

Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence

S. Trassaert

2000. ⟨hal-00158975⟩

• Communication dans un congrès

First results of GaN MESFET's realized on (111) Si

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159036⟩

• Article dans une revue

On the design of multimode ultrasonic transducers for acoustooptic correlation applications

Jean-Michel Rouvaen, Atika Rivenq, P. Logette, Philippe Goutin, F. Haine

Journal of Physics D: Applied Physics, 2000, 33, pp.3041-3052. ⟨hal-00159047⟩