Publications

• Article dans une revue

Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahreche, F. Omnes

Journal of Electronic Materials, 2000, 29, pp.603-606. ⟨hal-00158984⟩

• Communication dans un congrès

Diagnosis of trapping phenomena in GaN MESFET's

G. Meneghesso, A. Chini, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière

2000, pp.389-392. ⟨hal-00159002⟩

• Article dans une revue

Defect assisted tunneling current : a revised interpretation of scanning tunneling spectroscopy measurements

B. Grandidier, X. de La Broïse, D. Stievenard, C. Delerue, M. Lannoo, M. Stellmacher, J. Bourgoin

Applied Physics Letters, 2000, 76, pp.3142-3144. ⟨hal-00158642⟩

• Article dans une revue

Magneto-acoustic ceramics for parametric sound wave phase conjugators

Andrey Brysev, Philippe Pernod, Vladimir Preobrazhensky

The paper reflects the recent experimental results on the elaboration and study of active materials for magneto-acoustic phase conjugators (MAPCs). The results of complex measurements of MAPC parameters are demonstrated on typical samples of NiFe2O4 magnetostrictive ceramics. The mechanism of…

Ultrasonics, 2000, 38 (1-8), pp.834-837. ⟨10.1016/S0041-624X(99)00193-6⟩. ⟨hal-00158452⟩

• Autre publication scientifique

Etude et caractérisation microondes en basses températures de résonateurs coplanaires supraconducteurs et de transistors en vue de réaliser des dispositifs micro-électroniques

Yannick Roelens

2000. ⟨hal-00158479⟩

• Communication dans un congrès

Organic self-assembled monolayers on silicon : electronic properties and applications in nanoelectronics and molecular electronics devices

D. Vuillaume

Instituto di ellectronica dello stato solido, 2000, Roma, Italy. ⟨hal-00158486⟩

• Article dans une revue

A MEMS oriented distributed processor for integrated feed-back controller

Y. Mita, A. Kaiser, Patrick Garda, M. Milgram, H. Fujita

Electronics and Communications in Japan, Part 2 : Electronics, 2000, 83, pp.48-55. ⟨hal-00158498⟩

• Article dans une revue

Surface roughness, strain and alloy segregation in lattice matched heteroepitaxy

C. Priester, G. Grenet

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.16029-16032. ⟨hal-00158658⟩

• Article dans une revue

Fabricating conductive microstructures by direct electron beam writing on hydrogenated n-type Si-doped GaAs

S. Silvestre, E. Constant, D. Bernard-Loridant, B. Sieber

Applied Physics Letters, 2000, 19, pp.2731-2733. ⟨hal-00158583⟩

• Communication dans un congrès

Croissance EJM d'îlots InAs sur des tampons AIInAs et GaInAs désadaptés sur GaAs

Y. Cordier, P. Miska, D. Ferre

13ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2000, 2000, Saint Aygulf, France. ⟨hal-00158439⟩