Publications

• Communication dans un congrès

Impact of inductance on timing characteristics of VLSI interconnects

Gregory Servel, Fabrice Huret, Erick Paleczny, P. Kennis, Denis Deschacht

2000, pp.C17/1-6. ⟨hal-00158602⟩

• Article dans une revue

Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps

Y. Cordier, D. Ferre, J.M. Chauveau, J. Dipersio

Applied Surface Science, 2000, 166, pp.442-445. ⟨hal-00158436⟩

• Communication dans un congrès

Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : comparison with the GaInAs/GaAs system

X. Wallart, D. Deresmes, F. Mollot

2000, pp.231-234. ⟨hal-00158442⟩

• Article dans une revue

Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates

X. Wallart, F. Mollot

Applied Surface Science, 2000, 166, pp.446-450. ⟨hal-00158444⟩

• Article dans une revue

Determination of the electrical properties of thermally grown ultrathin nitride films

N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, C. Chaneliere

Microelectronics Reliability, 2000, 40, pp.589-592. ⟨hal-00158478⟩

• Communication dans un congrès

Fast photodetection

Jean-Pierre Vilcot, Joseph Harari, M. Fendler, V. Magnin, Samuel Dupont, Didier Decoster

3rd European Microwave Week, Workshop on Microwave Optoelectronics, 2000, Paris, France. ⟨hal-00158617⟩

• Communication dans un congrès

Optical to millimeter-waves transducers

Jean-Pierre Vilcot

Microwave Photonic Devices and Systems, 2000, Grasmere, France. ⟨hal-00158621⟩

• Autre publication scientifique

Structure électronique et propriétés thermoélectriques des skudttérudites

M. Lassalle

2000. ⟨hal-00158639⟩

• Article dans une revue

Nature of impurity states in doped amorphous silicon

Guy Allan, Christophe Delerue, Michel Lannoo

We calculate the electronic structure of doped amorphous silicon in a tight-binding framework. Substitutional impurities are randomly introduced at fourfold-coordinated sites of a previously published model of a-Si:H. Our most important result is that single impurities have much larger binding…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.10206-10210. ⟨10.1103/PhysRevB.61.10206⟩. ⟨hal-00158663⟩

• Article dans une revue

Quantum confinement in germanium nanocrystals

Yann-Michel Niquet, Guy Allan, Christophe Delerue, Michel Lannoo

The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters.…

Applied Physics Letters, 2000, 77, pp.1182-1184. ⟨10.1063/1.1289659⟩. ⟨hal-00158666⟩