Publications

• Article dans une revue

Millimeter-wave pulsed oscillator global modeling by means of electromagnetic, thermal, electrical and carrier transport physical coupled models

Stéphane Beaussart, Oliver Perrin, Marie-Renée Friscourt, Christophe Dalle

The time domain modeling of the operation of a 94-GHz pulsed silicon IMPATT oscillator, based on a physical approach, is described in this paper. It relies on the coupling of electrical, thermal, electromagnetic, and carrier transport physical models. The model has been used to study the high-power…

IEEE Transactions on Microwave Theory and Techniques, 1999, 47, pp.929-934. ⟨10.1109/22.769328⟩. ⟨hal-00005341⟩

• Communication dans un congrès

Pulsed measurements of GaN MESFET

B. Boudart, S. Trassaert, Christophe Gaquière, Didier Theron, Y. Crosnier, Fabrice Huet, M.A. Poisson

GAAS 99, 1999, Munich, Germany. ⟨hal-01649413⟩

• Chapitre d'ouvrage

Metal-semiconductor-metal photodetectors

Joseph Harari, Jean-Pierre Vilcot, Didier Decoster

Wiley Encyclopedia of Electrical and Electronics Engineering, Volume 12, Wiley, pp.561-577, 1999. ⟨hal-00132302⟩

• Article dans une revue

Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy

Emmanuel Dubois, Jean-Luc Bubbendorff

Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) nanolithography techniques based on local oxidation of silicon/titanium and electron beam exposure of PMMA are described. It is shown that a 10 nm resolution can routinely be achieved using tapping-mode AFM-based anodization of…

Solid-State Electronics, 1999, 43 (6), pp.1085-1089. ⟨10.1016/S0038-1101(99)00029-5⟩. ⟨hal-04246744⟩

• Article dans une revue

Electromagnetic waves in finite superlattices with buffer and cap layers

M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski, M. Hammouchi, E. El Boudouti, A. Nougaoui

Journal of the Optical Society of America. A Optics, Image Science, and Vision, 1999, 16 (7), pp.1703. ⟨10.1364/JOSAA.16.001703⟩. ⟨hal-04070498⟩

• Article dans une revue

Transferred InP-based HBVs on glass substrate

S. Arscott, P. Mounaix, D. Lippens

Electronics Letters, 1999, 35 (17), pp.1493. ⟨10.1049/el:19990984⟩. ⟨hal-02348069⟩

• Communication dans un congrès

Large signal and pulse instabilities in GaN HFETs

Erhard Kohn, E Strobel, I. Daumiller, Christophe Gaquière, B. Boudart, Didier Theron, N.X. Nguyen, C.N. Nguyen

1st Gallium Nitride Electronic Device Workshop, 1999, Cornell, United States. ⟨hal-01654323⟩

• Article dans une revue

High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

Gilles Dambrine, J.-P. Raskin, Francois Danneville, D. Vanhoenackel Janvier, J.-P. Colinge, A. Cappy

IEEE Transactions on Electron Devices, 1999, 46 (8), pp.1733-1741. ⟨10.1109/16.777164⟩. ⟨hal-03612809⟩

• Article dans une revue

Trap effects studies in GaN MESFETs by pulsed measurements

S. Trassaert, B. Boudart, Christophe Gaquière, Didier Theron, Y. Crosnier, F. Huet, M.A. Poisson

Electronics Letters, 1999, 35 (16), ⟨10.1049/el:19990887⟩. ⟨hal-01647642⟩

• Communication dans un congrès

Développement d’une attaque chimique sélective entre GaAs et Al0.22Ga0.78As et application au creusement du fossé de grille d’un TEC de puissance

X. Hue, B. Boudart, Y. Crosnier

7es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1999, Egat, France. ⟨hal-01654470⟩