Publications

• Article dans une revue

Bromine/methanol wet chemical etching of via holes for InP microwave devices

S. Trassaert, B. Boudart, Stephane Piotrowicz, Y. Crosnier

We report on the realization of via holes on InP material (for the first time to our knowledge) using bromine/methanol wet chemical etching. Typical dimension of the via holes is about 80 μμm in diameter. A specific layout has been accomplished to obtain the via hole equivalent circuit.…

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 1998, 16, pp.561-564. ⟨10.1116/1.589863⟩. ⟨hal-01644706⟩

• Article dans une revue

Noise analysis of 0.1 mm gate MESFETs and HEMTs

Javier Mateos, Tomas Gonzalez, Daniel Pardo, Patrick Tadyszak, Francois Danneville, A. Cappy

Solid-State Electronics, 1998, 42 (1), pp.79-85. ⟨10.1016/S0038-1101(97)00196-2⟩. ⟨hal-03612836⟩

• Communication dans un congrès

Miniaturized deformable magnetic mirror for adaptive optics

Skandar Basrour, J. Boussey-Said, O. Cugat, C. Divoux, P. Mounaix, P. Kern

An alternative approach to more compact deformable mirrors for adaptive optics is developed. A thin and flexible reflective membrane is coated with a magnetic layer and locally deformed by the field created by an array of planar microcoils. This novel technology should enable higher resolution with…

Int. Symp. on Astronomical Telescopes and Instrumentation., 1998, Kona, Hawaii, France. pp.850-857. ⟨hal-00009140⟩

• Article dans une revue

Triol sol-gel route for preparing PZT thin films

S. Arscott

Ceramic Transactions, 1998. ⟨hal-02348121⟩

• Article dans une revue

An Accurate Dual-Gate HFET Nonlinear Model for Millimeter-Wave MMIC Design

Rachid Allam, Christophe Kolanowski, J. C. De Jaeger, Y. Crosnier

An accurate nonlinear model for dual-gate HFETs is presented in this paper. Because of the complexity of the global equivalent circuit, the dual-gate transistor is modeled as two single-gate devices in cascode configuration. A good agreement between the measured and simulated performance is…

International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1998, 1998 (4), pp.315--320. ⟨10.1002/(SICI)1099-047X(199807)8:43.0.CO;2-E⟩. ⟨hal-03360875⟩

• Communication dans un congrès

Etude du contact Ti/Al/Ni/Au sur GaN

S. Trassaert, B. Boudart, Xavier Wallart, J.C. Pesant, L Fugère, Didier Theron, Y. Crosnier

GDR Matériaux Grand Gap, 1998, Villeneuve d'Ascq, France. ⟨hal-01654461⟩

• Communication dans un congrès

A complementary approach to the access design of millimeter power HFETs

Yann Michel Niquet, Stephane Piotrowicz, Bertrand Bonte, X. Hue, S. Trassaert, B. Boudart, Y. Crosnier

A complementary approach to the access design of millimeter power HFETs . 28th European Microwave Conference (EUMC) , 1998, Amsterdam, Netherlands. ⟨hal-01649391⟩

• Article dans une revue

94 GHz pulsed silicon IMPATT oscillator modelling

Stéphane Beaussart, Olivier Perrin, Marie-Renée Friscourt, Christophe Dalle

A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain isothermal model, and time-domain electro-thermal model, which basically…

IEEE Transactions on Microwave Theory and Techniques, 1998, 46, pp.1382-1390. ⟨10.1109/22.721139⟩. ⟨hal-00005340⟩

• Article dans une revue

Influence of the operating temperature on the design and utilization of 94 GHz pulsed silicon IMPATT diodes

Christophe Dalle, Stéphane Beaussart, Marie-Renée Friscourt

The RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time domain electrical oscillator models. It is demonstrated that these diodes have…

IEEE Electron Device Letters, 1998, EDL-19, pp.262-264. ⟨10.1109/55.701437⟩. ⟨hal-00005339⟩

• Proceedings/Recueil des communications

Radio over Fiber Telecommunications Systems : the Key Optoelectronic Devices for the Receiver

Jean-Pierre Vilcot, Manuel Fendler, Filipe Jorge, J. Barette, Vincent Magnin, Sophie Maricot, Didier Decoster

Recent developments in radio over fiber telecommunication systems such as micro- or pico- cellular mobile communications would require specific performance from either optical emitters or receivers . In this paper, we will describe this receiver part, i.e. the optical to micro- or millimeter- wave…

COMPOUND SEMICONDUCTOR POWER TRANSISTORS and STATE- OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX), 98 (12), THE ELECTROCHEMICAL SOCIETY, INC., pp.257, 1998, 9781566772228. ⟨hal-04452141⟩