Publications

• Communication dans un congrès

Very low-voltage fully differential amplifier for switched capacitor applications

M. Dessouky, A. Kaiser

2000, pp.441-444. ⟨hal-00158508⟩

• Communication dans un congrès

Optique adaptative : réalisation et actionnement d'une membrane continue par un réseau de micro-actionneurs 3D auto-assemblés

E. Quevy, L. Buchaillot, D. Collard

Actes des 20èmes Journées Nationales d'Optique Guidée, 2000, Toulouse, France. ⟨hal-00158521⟩

• Communication dans un congrès

Experiments on micromanipulation using adhesion forces in unconstained environment

Y. Rollot, S. Regnier, S. Haliyo, L. Buchaillot, J.C. Guinot, P. Bidaud

2000, pp.653-658. ⟨hal-00158533⟩

• Article dans une revue

Evaluation of niobium effects on the longitudinal piezoelectric coefficients of Pb(Zr, Ti)O-3 thin films

T. Haccart, Eric Cattan, Denis Remiens, S. Hiboux, P. Muralt

Applied Physics Letters, 2000, 76, pp.3292-3294. ⟨hal-00158542⟩

• Article dans une revue

Quantum confinement in germanium nanocrystals

Yann-Michel Niquet, Guy Allan, Christophe Delerue, Michel Lannoo

The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters.…

Applied Physics Letters, 2000, 77, pp.1182-1184. ⟨10.1063/1.1289659⟩. ⟨hal-00158666⟩

• Communication dans un congrès

Impact of inductance on timing characteristics of VLSI interconnects

Gregory Servel, Fabrice Huret, Erick Paleczny, P. Kennis, Denis Deschacht

2000, pp.C17/1-6. ⟨hal-00158602⟩

• Autre publication scientifique

Structure électronique et propriétés thermoélectriques des skudttérudites

M. Lassalle

2000. ⟨hal-00158639⟩

• Article dans une revue

Nature of impurity states in doped amorphous silicon

Guy Allan, Christophe Delerue, Michel Lannoo

We calculate the electronic structure of doped amorphous silicon in a tight-binding framework. Substitutional impurities are randomly introduced at fourfold-coordinated sites of a previously published model of a-Si:H. Our most important result is that single impurities have much larger binding…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.10206-10210. ⟨10.1103/PhysRevB.61.10206⟩. ⟨hal-00158663⟩

• Autre publication scientifique

Conception, réalisation et caractérisation de transistors à effet de champ et d'amplificateurs pour des applications de puissance à haute linéarité en bandes K et Ka

X. Hue

2000. ⟨hal-00158969⟩

• Communication dans un congrès

Excitonic and quasiparticle gaps in Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to…

CECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158952⟩