Publications

• Article dans une revue

HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS

D Goguenheim, Alain Bravaix, Dominique Vuillaume, M Varrot, N Revil, P Mortini

AC stressing is investigated to determine the hot-carrier reliability in a 0.5 μm CMOS technology and is interpreted by a quasi-static model based on distinct damage mechanisms. The hot-carrier dependence of n-MOSFETs operating in pass-transistor configurations is carefully studied as a function of…

Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (4), pp.539-544. ⟨10.1016/S0026-2714(97)00217-5⟩. ⟨hal-03674496⟩

• Article dans une revue

Giant gaps in photonic band structures

Jerome O. Vasseur, L. Dobrzynski, Abdellatif Akjouj, Bahram Djafari-Rouhani, J. Vasseur, J. Zemmouri

Physical Review B, 1998, 57 (16), pp.R9388-R9391. ⟨10.1103/PhysRevB.57.R9388⟩. ⟨hal-03301312⟩

• Poster de conférence

Conception et optimisation de dispositifs microtechnologiques à l’aide d’un Algorithme Génétique

Vincent Magnin, Ian Cayrefourcq, Bob Bellini

5ème Journée Nationale du Réseau doctoral en Microtechnologies, Mar 1998, Toulouse, France. ⟨hal-04458045⟩

• Article dans une revue

Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001)

S. Guillon, R. Y.-F. Yip, P. Desjardins, M. Chicoine, Z. Bougrioua, M. Beaudoin, A. Aït-Ouali, R. Masut

Journal of Vacuum Science & Technology A, 1998, 16 (2), pp.781-785. ⟨10.1116/1.581521⟩. ⟨hal-02906468⟩

• Article dans une revue

Sol-gel derived thin films on GaAs

S. Arscott, N Smith, R Kurchania, S Milne, R Miles

Semiconductor Science and Technology, 1998, 13 (2), pp.244-248. ⟨10.1088/0268-1242/13/2/016⟩. ⟨hal-02348109⟩

• Article dans une revue

Giant electronic stop bands in one-dimensional comblike structures

Jerome O. Vasseur, Abdellatif Akjouj, L. Dobrzynski, Bahram Djafari-Rouhani, J. Vasseur, M. Kushwaha

EPL - Europhysics Letters, 1998, 41 (3), pp.321-326. ⟨10.1209/epl/i1998-00150-y⟩. ⟨hal-03301311⟩

• Article dans une revue

Hot-carrier injections in SiO2

Dominique Vuillaume, Alain Bravaix, D Goguenheim

We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier…

Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (1), pp.7-22. ⟨10.1016/S0026-2714(97)00179-0⟩. ⟨hal-03674471⟩

• Article dans une revue

Influence of inhomogeneous strain relaxation on the photoluminescence of II-VI nanostructures

Y.M. Niquet, Cécile Gourgon, L.S. Dang, H. Mariette, Catherine Priester, Christophe Vieu, G. Brunthaler, H. Straub, A. Darhuber, W. Faschinger, G. Bauer

Journal of Crystal Growth, 1998, 184, pp.334-338. ⟨hal-04143190⟩

• Article dans une revue

Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy

G. Grenet, Michel Gendry, M. Oustric, Y. Robach, L. Porte, G. Hollinger, O. Marty, M. Pitaval, C. Priester

The clustering development for lattice-matched A104s ln0.52 As grown on (001) oriented InP substrates by molecular beam epitaxy (MBE) has been investigated by ex-situ transmission electron microscopy (TEM) and in-situ scanning tunnelling microscopy (STM). For a growth temperature of 450°C, a V/III…

Applied Surface Science, 1998, 123, pp.324 - 328. ⟨10.1016/S0169-4332(97)00522-9⟩. ⟨hal-02194425⟩

• Article dans une revue

Noise modeling in MESFET and HEMT mixers using a uniform noisy line model

Francois Danneville, Gilles Dambrine, A. Cappy

IEEE Transactions on Electron Devices, 1998, 45 (10), pp.2207-2212. ⟨10.1109/16.725255⟩. ⟨hal-03612813⟩