Publications

• Communication dans un congrès

Convertisseur de polarisation avec contrôle de phase intégré sur semiconducteur III-V de type AIGaAs/GaAs

N. Grossard, H. Porte, Jean-Pierre Vilcot, J.P. Goedgebuer

20èmes Journées Nationales d'Optique Guidée, 2000, Toulouse, France. ⟨hal-00158597⟩

• Communication dans un congrès

Ballistic emitter for InP heterojunction bipolar transistors

D. Sicault, S. Demichel, R. Teissier, C. Dupuis, F. Pardo, F. Mollot, J.L. Pelouard

25th International Conference on the Physics of Semiconductors, ICPS-25, 2000, Japan. pp.1781-1782. ⟨hal-00250435⟩

• Autre publication scientifique

Contribution à la conception et à la réalisation de liaisons radio haut débit intra-bâtiment à 60 GHz

Christophe Loyez

2000. ⟨hal-00157903⟩

• Autre publication scientifique

Nouvelles architectures de sources stables programmables en gamme millimétrique et centimétrique

G. Lewandowski

2000. ⟨hal-00158127⟩

• Article dans une revue

Measurement of residual phase noise of frequency divider using a single divider technique

V. Brugidou, Paul-Alain Rolland

A new technique for measuring the residual phase noise of a frequency divider is proposed. The new technique enables one divider to be characterised whereas the traditional technique necessitates two dividers. Experimentation demonstrates the validity of the technique, which is quicker and more…

Electronics Letters, 2000, 36 (16), pp.1391-1393. ⟨10.1049/el:20000983⟩. ⟨hal-00158126⟩

• Article dans une revue

Dependence of the carrier lifetime on acceptor concentration in GaAs grown at low-temperature under different growth and annealing conditions

M. Stellmacher, J. Nagle, Jean-Francois Lampin, P. Santoro, J. Vaneecloo, Antigoni Alexandrou

Journal of Applied Physics, 2000, 88, pp.6026-6031. ⟨hal-00158228⟩

• Communication dans un congrès

Acoustic scattering in time domain using the boundary element method

A. Lavie, Bertrand Dubus, A. El Ghaouty

2000, pp.129-133. ⟨hal-00157820⟩

• Article dans une revue

An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs

J.S. Goo, C.H. Choi, Francois Danneville, E. Morifuji, H.S. Momose, Z. Yu, H. Iwai, T.H. Lee, R.W. Dutton

IEEE Transactions on Electron Devices, 2000, 47, pp.2410-2419. ⟨hal-00157860⟩

• Communication dans un congrès

Effects of substrate preparation on properties of YBaCuO thin films

A. Dégardin, X. Castel, M. Achani, Maryline Guilloux-Viry, E. Caristan, Yannick Roelens, J.C. Carru, A. Perrin, A. Kreisler

2000, pp.1993-1994. ⟨hal-00157906⟩

• Communication dans un congrès

An ultra high switching frequency step-down DC-DC converter based on gallium arsenide devices

Mamadou Gaye, Sami Ajram, Paul Maynadier, Georges Salmer

A 50MHz to 100MHz dc-dc power converter using Gallium Arsenide power switches is studied. GaAs Schottky rectifiers with high breakdown voltage and very small Ron x Con switching quality factor have been fabricated. A 10V to 5V (or 8V) prototype with an output power of 2.6Watts and a power…

_, 2000, _, France. 4 pp. ⟨hal-00157875⟩