Publications

• Article dans une revue

Microscopic characterization of defects using scanning tunneling microscopy

D. Stievenard

Materials Science and Engineering: B, 2000, B71, pp.120-127. ⟨hal-00158667⟩

• Communication dans un congrès

Microtechnologies for the monolithic fabrication of mm and submm nonlinear devices

P. Mounaix, S. Arscott, T. David, Florence Podevin, X. Melique, D. Lippens

2000, pp.28-31. ⟨hal-00158204⟩

• Communication dans un congrès

High Q InP-based varactor diodes

T. David, P. Mounaix, X. Melique, F. Mollot, O. Vanbésien, M. Chaubet, D. Lippens

Proceedings of the 11th International Symposium on Space Terahertz Technology, 2000, Ann Arbor, MI, United States. ⟨hal-00158223⟩

• Communication dans un congrès

Détection par micro-ondes de défauts dans les matériaux diélectriques

D. Glay, T. Lasri, A. Mamouni, Y. Leroy

6èmes Journées Caractérisation Microondes et Matériaux, JCMM 2000, 2000, Paris, France. ⟨hal-00158162⟩

• Communication dans un congrès

Towards terahertz circuits via InP micromachining techniques

S. Arscott, T. David, X. Melique, P. Mounaix, D. Lippens

2000, pp.561-564. ⟨hal-00158203⟩

• Article dans une revue

Resonant and localized electromagnetic modes in finite superlattices

M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

Physical Review B, 2000, 61 (3), pp.2059-2064. ⟨10.1103/PhysRevB.61.2059⟩. ⟨hal-04070077⟩

• Communication dans un congrès

Finite element modeling of damping using piezoelectric materials

Anne-Christine Hladky, C. Granger

2000, pp.64-65. ⟨hal-00157823⟩

• Article dans une revue

Strong isotope effects in the UV light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs : Si

Jacques Chevallier, M. Barbe, M. Constant, D. Bernard-Loridant, S. Silvestre, E. Constant

Superlattices and Microstructures, 2000, 27, pp.447-452. ⟨hal-00158584⟩

• Article dans une revue

Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Bernard Legrand, Vincent Agache, Jean-Philippe Nys, Vincent Senez, Didier Stiévenard

Starting from silicon on insulator substrates, we show that a thermal treatment (in the 600–900 °C range) induces the creation of silicon islands. To characterize the island formation as well as the initial silicon layer thickness, we use in situ Auger electron spectroscopy analysis in an ultrahigh…

Applied Physics Letters, 2000, 76, pp.3271-3273. ⟨10.1063/1.126603⟩. ⟨hal-00158537⟩

• Article dans une revue

Design and simulation of a dual mode semiconductor laser using sampled grating DFB structure

M. Hussein-Mourad, Jean-Pierre Vilcot, Didier Decoster, D. Marcenac

IEE Proceedings. Optolectronics, 2000, 147, pp.37-42. ⟨hal-00158552⟩