Publications

• Article dans une revue

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

D. Goguenheim, Alain Bravaix, D. Vuillaume, F. Mondon, P. Candelierd, M. Jourdaine, A. Meinertzhagen

Stress Induced Leakage Currents (SILC) are studied in 5 nm-thick oxides on both capacitors and N-MOSFET's after homogeneous FOWLER-NORDHEIM injections under high field stress (<9MV/cm) for both polarities and localized Hot-Carrier injections. Standard I(V) and high-frequency C(V) curves are…

Microelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.141-144. ⟨10.1016/S0167-9317(97)00035-X⟩. ⟨hal-03023026⟩

• Article dans une revue

Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation

Alain Bravaix, D. Goguenheim, D. Vuillaume, N. Revil, M. Varrot, P. Mortini

New degradation mechanisms are found during AC pass transistor operation combined with charge-pumping analysis in thin gate-oxide p-MOSFET's. The electron trapping is clearly saturating and in some cases can be completely suppressed by the subsequent detrapping phases leading to the strong…

Microelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.305-308. ⟨10.1016/S0167-9317(97)00069-5⟩. ⟨hal-03023046⟩

• Communication dans un congrès

PHOTOTRANSISTORS BIPOLAIRES A HETEROJONCTION InP/InGaAs A GUIDE D'ONDE

Vincent Magnin, Jerome van de Casteele, Joseph Harari, Jean-Philippe Gouy, Jean-Pierre Vilcot, Sophie Maricot, Paul-Alain Rolland, Didier Decoster

Dans l'avenir sont susceptibles de voir se développer des systèmes utilisant la transmission de signaux hyperfréquences ou millimétriques par voie optique. Pour cela, il est nécessaire de disposer de photodétecteurs ultrarapides, et le phototransistor à éclairement par la tranche peut être l…

Journées Nationales Micro-Ondes (JNM'97), May 1997, Saint-malo, France. ⟨hal-04458097⟩

• Proceedings/Recueil des communications

InP photodetectors for millimeter wave applications based on edge-coupled heterojunction phototransistors

Jerome van de Casteele, Vincent Magnin, Jean-Philippe Gouy, Jean-Pierre Vilcot, Joseph Harari, Sophie Maricot, Didier Decoster

In this paper, we present first experimental results obtained on two and three terminal edge-coupled InP-InGaAs heterojunction phototransistors showing that these devices seem very promising for microwave and millimeter wave applications.

SPIE Photonics West '97, pp.176-182, 1997, ⟨10.1117/12.271188⟩. ⟨hal-04446301⟩

• Article dans une revue

Angular measurement of acoustic reflection coefficient for substrate materials and layered structures by V(z) technique

Wei-Jiang Xu, Mohamed Ourak

An experimental method to evaluate the acoustic reflection coefficient as a function of the incident angle R(θ) for substrate materials or layered structures is presented. By measuring the acoustic material signature V(z) using a highly focused acoustic lens or transducer at normal incidence, the…

NDT & E International, 1997, 30 (2), pp.75-83. ⟨10.1016/S0963-8695(97)85497-7⟩. ⟨hal-04081206⟩

• Article dans une revue

Absolute band gaps and electromagnetic transmission in quasi-one-dimensional comb structures

Jerome O. Vasseur, P. Deymier, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj

Physical Review B, 1997, 55 (16), pp.10434-10442. ⟨10.1103/PhysRevB.55.10434⟩. ⟨hal-03301307⟩

• Communication dans un congrès

Edge-coupled Waveguide InGaAs/InP Heterojunction Phototransistors

Vincent Magnin, Jérôme Vandecasteele, Joseph Harari, Jean-Philippe Gouy, Sophie Maricot, Jean-Pierre Vilcot, Didier Decoster

Heterojunction Phototransistors (HPTs) are promising devices for high-performance optical fibre telecommunication systems for digital or microwaves applications at long wavelengths (1.3 and 1.55 µm). They simultaneously detect and amplify an optical signal, thus combining the functions of a PIN…

SEMICONDUCTOR AND INTEGRATED OPTOELECTRONICS (SIOE'97), University of Wales, Bangor, and Cardiff, in association with the Institute of Physics Quantum Electronics Group, Mar 1997, Cardiff, United Kingdom. ⟨hal-04454420⟩

• Communication dans un congrès

REALISATION DE PHOTOTRANSISTORS InP/InGaAs A GUIDE D'ONDE

Vincent Magnin, Jérôme Vandecasteele

Journée Nationale du Réseau doctoral en Microtechnologies, Mar 1997, Besançon, France. ⟨hal-04458137⟩

• Communication dans un congrès

SPM-based lithography techniques using selective anodic oxidation

Emmanuel Dubois, Paul-Aymeric Fontaine, Didier Stiévenard

Proc. of Phantoms Strategic Domain Meetings PHASDOM’97, Mar 1997, Aachen, Germany. ⟨hal-04249072⟩

• Article dans une revue

Influence of the inhomogeneous strain relaxation on the optical properties of etched quantum wires

Y. Niquet, C. Priester, H. Mariette

Physical Review B, 1997, 55 (12), pp.R7387-R7390. ⟨10.1103/PhysRevB.55.R7387⟩. ⟨hal-04142823⟩